Broadband near-infrared luminescence from -ray irradiated bismuth-doped Y<inf>4</inf>GeO<inf>8</inf> crystals
- Publication Type:
- Journal Article
- Journal of the Electrochemical Society, 2011, 158 (9)
- Issue Date:
Broadband near-infrared emission centered at 1155 nm with full width at half maximum over 300 nm has been observed in -ray irradiated bismuth-doped Y4GeO8 crystals. The luminescence was bleached completely after thermal treatment at 350C for 2 h. Absorption spectra, electron spin resonance spectra, Raman spectra, excitation and emission spectra indicate that valence state change of bismuth was induced by -ray irradiation, and 3P1 → 3P0 transition of Bi ions is responsible for the near-infrared emission. The effect of Bi concentration on the luminescence properties of -ray irradiated samples was also discussed. © 2011 The Electrochemical Society.
Please use this identifier to cite or link to this item: