Broadband near-infrared luminescence from -ray irradiated bismuth-doped Y<inf>4</inf>GeO<inf>8</inf> crystals

Electrochemical Society
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Journal Article
Journal of The Electrochemical Society, 2011, 158 (9), pp. G203 - G206
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Broadband near-infrared emission centered at 1155 nm with full width at half maximum over 300 nm has been observed in c-ray irradiated bismuth-doped Y4GeO8 crystals. The luminescence was bleached completely after thermal treatment at 350C for 2 h. Absorption spectra, electron spin resonance spectra, Raman spectra, excitation and emission spectra indicate that valence state change of bismuth was induced by c-ray irradiation, and 3 P1 ! 3 P0 transition of Biþ ions is responsible for the near-infrared emission. The effect of Bi concentration on the luminescence properties of c-ray irradiated samples was also discussed.
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