Broadband near-infrared luminescence from -ray irradiated bismuth-doped Y<inf>4</inf>GeO<inf>8</inf> crystals

Publication Type:
Journal Article
Citation:
Journal of the Electrochemical Society, 2011, 158 (9)
Issue Date:
2011-08-03
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Broadband near-infrared emission centered at 1155 nm with full width at half maximum over 300 nm has been observed in -ray irradiated bismuth-doped Y4GeO8 crystals. The luminescence was bleached completely after thermal treatment at 350C for 2 h. Absorption spectra, electron spin resonance spectra, Raman spectra, excitation and emission spectra indicate that valence state change of bismuth was induced by -ray irradiation, and 3P1 → 3P0 transition of Bi ions is responsible for the near-infrared emission. The effect of Bi concentration on the luminescence properties of -ray irradiated samples was also discussed. © 2011 The Electrochemical Society.
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