Evidence for transformation from δt<inf>c</inf>to δl pinning in MgB<inf>2</inf>by graphene oxide doping with improved low and high field J<inf>c</inf>and pinning potential

Publication Type:
Journal Article
Citation:
Applied Physics Letters, 2013, 102 (15)
Issue Date:
2013-04-15
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Flux pinning mechanism of graphene oxide (GO) doped MgB2has been systematically studied. In the framework of the collective pinning theory, a B-T phase diagram has been constructed. By adjusting the GO doping level, the pinning mechanism in MgB2transformed from transition temperature fluctuation induced pinning, δTcpinning, to mean free path fluctuation induced pinning, δl pinning, is observed. Furthermore, in terms of the thermally activated flux flow model, the pinning potential in high field (B > 5 T) is enhanced by GO doping. The unique feature of GO is the significant improvement of both low field Jcand high field Jc. © 2013 American Institute of Physics.
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