Evidence for transformation from δt<inf>c</inf> to δl pinning in MgB<inf>2</inf> by graphene oxide doping with improved low and high field J<inf>c</inf> and pinning potential
- Publication Type:
- Journal Article
- Applied Physics Letters, 2013, 102 (15)
- Issue Date:
Flux pinning mechanism of graphene oxide (GO) doped MgB2 has been systematically studied. In the framework of the collective pinning theory, a B-T phase diagram has been constructed. By adjusting the GO doping level, the pinning mechanism in MgB2 transformed from transition temperature fluctuation induced pinning, δTc pinning, to mean free path fluctuation induced pinning, δl pinning, is observed. Furthermore, in terms of the thermally activated flux flow model, the pinning potential in high field (B > 5 T) is enhanced by GO doping. The unique feature of GO is the significant improvement of both low field Jc and high field J c. © 2013 American Institute of Physics.
Please use this identifier to cite or link to this item: