Evidence for transformation from δt<inf>c</inf>to δl pinning in MgB<inf>2</inf>by graphene oxide doping with improved low and high field J<inf>c</inf>and pinning potential

Publication Type:
Journal Article
Applied Physics Letters, 2013, 102 (15)
Issue Date:
Full metadata record
Files in This Item:
Filename Description Size
1%2E4799360.pdfPublished Version1.4 MB
Adobe PDF
Flux pinning mechanism of graphene oxide (GO) doped MgB 2 has been systematically studied. In the framework of the collective pinning theory, a B-T phase diagram has been constructed. By adjusting the GO doping level, the pinning mechanism in MgB 2 transformed from transition temperature fluctuation induced pinning, δT c pinning, to mean free path fluctuation induced pinning, δl pinning, is observed. Furthermore, in terms of the thermally activated flux flow model, the pinning potential in high field (B > 5 T) is enhanced by GO doping. The unique feature of GO is the significant improvement of both low field J c and high field J c . © 2013 American Institute of Physics.
Please use this identifier to cite or link to this item: