Electron beam directed etching of hexagonal boron nitride

Elbadawi, C; Tran, TT; Kolíbal, M; Šikola, T; Scott, J; Cai, Q; Li, LH; Taniguchi, T; Watanabe, K; Toth, M; Aharonovich, I; Lobo, C

Electron beam directed etching of hexagonal boron nitride

Elbadawi, C Tran, TT

Kolíbal, M Šikola, T Scott, J Cai, Q Li, LH Taniguchi, T Watanabe, K Toth, M

Aharonovich, I

Lobo, C

Permalink

Publication Type:: Journal Article
Citation:: Nanoscale, 2016, 8 (36), pp. 16182 - 16186
Issue Date:: 2016-09-28

Open Access

Copyright Clearance Process

Recently Added
In Progress
Open Access

This item is open access.

Adobe PDF

Download Published VersionAdobe PDF (2.43 MB)

View on publisher's site

View statistics

Full metadata record

Field	Value	Language
dc.contributor.author	Elbadawi, C	en_US
dc.contributor.author	Tran, TT https://orcid.org/0000-0001-8960-0253	en_US
dc.contributor.author	Kolíbal, M	en_US
dc.contributor.author	Šikola, T	en_US
dc.contributor.author	Scott, J	en_US
dc.contributor.author	Cai, Q	en_US
dc.contributor.author	Li, LH	en_US
dc.contributor.author	Taniguchi, T	en_US
dc.contributor.author	Watanabe, K	en_US
dc.contributor.author	Toth, M https://orcid.org/0000-0003-1564-4899	en_US
dc.contributor.author	Aharonovich, I https://orcid.org/0000-0003-4304-3935	en_US
dc.contributor.author	Lobo, C https://orcid.org/0000-0002-2746-1363	en_US
dc.date.issued	2016-09-28	en_US
dc.identifier.citation	Nanoscale, 2016, 8 (36), pp. 16182 - 16186	en_US
dc.identifier.issn	2040-3364	en_US
dc.identifier.uri	http://hdl.handle.net/10453/117014
dc.description.abstract	© 2016 The Royal Society of Chemistry. Hexagonal boron nitride (hBN) is a wide bandgap van der Waals material with unique optical properties that make it attractive for two dimensional (2D) photonic and optoelectronic devices. However, broad deployment and exploitation of hBN is limited by alack of suitable material and device processing and nano prototyping techniques. Here we present a high resolution, single step electron beam technique for chemical dry etching of hBN. Etching is achieved using H2O as a precursor gas, at both room temperature and elevated hBN temperatures. The technique enables damage-free, nano scale, iterative patterning of supported and suspended 2D hBN, thus opening the door to facile fabrication of hBN-based 2D heterostructures and devices.	en_US
dc.relation.ispartof	Nanoscale	en_US
dc.relation.isbasedon	10.1039/c6nr04959a	en_US
dc.subject.classification	Nanoscience & Nanotechnology	en_US
dc.title	Electron beam directed etching of hexagonal boron nitride	en_US
dc.type	Journal Article
utslib.citation.volume	36	en_US
utslib.citation.volume	8	en_US
utslib.for	0204 Condensed Matter Physics	en_US
utslib.for	0912 Materials Engineering	en_US
utslib.for	02 Physical Sciences	en_US
utslib.for	03 Chemical Sciences	en_US
utslib.for	10 Technology	en_US
pubs.embargo.period	Not known	en_US
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Science
pubs.organisational-group	/University of Technology Sydney/Faculty of Science/School of Mathematical and Physical Sciences
pubs.organisational-group	/University of Technology Sydney/Strength - IBMD - Initiative for Biomedical Devices
pubs.organisational-group	/University of Technology Sydney/Strength - MTEE - Research Centre Materials and Technology for Energy Efficiency
utslib.copyright.status	open_access
pubs.issue	36	en_US
pubs.publication-status	Published	en_US
pubs.volume	8	en_US

Abstract:

© 2016 The Royal Society of Chemistry. Hexagonal boron nitride (hBN) is a wide bandgap van der Waals material with unique optical properties that make it attractive for two dimensional (2D) photonic and optoelectronic devices. However, broad deployment and exploitation of hBN is limited by alack of suitable material and device processing and nano prototyping techniques. Here we present a high resolution, single step electron beam technique for chemical dry etching of hBN. Etching is achieved using H2O as a precursor gas, at both room temperature and elevated hBN temperatures. The technique enables damage-free, nano scale, iterative patterning of supported and suspended 2D hBN, thus opening the door to facile fabrication of hBN-based 2D heterostructures and devices.

Please use this identifier to cite or link to this item:

http://hdl.handle.net/10453/117014