Electron beam directed etching of hexagonal boron nitride.
- Royal Society of Chemistry
- Publication Type:
- Journal Article
- Nanoscale, 2016, 8 (36), pp. 16182 - 16186
- Issue Date:
|dc.identifier.citation||Nanoscale, 2016, 8 (36), pp. 16182 - 16186||en_US|
|dc.description.abstract||Hexagonal boron nitride (hBN) is a wide bandgap van der Waals material with unique optical properties that make it attractive for two dimensional (2D) photonic and optoelectronic devices. However, broad deployment and exploitation of hBN is limited by alack of suitable material and device processing and nano prototyping techniques. Here we present a high resolution, single step electron beam technique for chemical dry etching of hBN. Etching is achieved using H2O as a precursor gas, at both room temperature and elevated hBN temperatures. The technique enables damage-free, nano scale, iterative patterning of supported and suspended 2D hBN, thus opening the door to facile fabrication of hBN-based 2D heterostructures and devices.||en_US|
|dc.publisher||Royal Society of Chemistry||en_US|
|dc.subject.classification||Nanoscience & Nanotechnology||en_US|
|dc.title||Electron beam directed etching of hexagonal boron nitride.||en_US|
|utslib.for||0204 Condensed Matter Physics||en_US|
|utslib.for||0205 Optical Physics||en_US|
|utslib.for||0912 Materials Engineering||en_US|
|utslib.for||02 Physical Sciences||en_US|
|utslib.for||03 Chemical Sciences||en_US|
|pubs.organisational-group||/University of Technology Sydney|
|pubs.organisational-group||/University of Technology Sydney/Faculty of Science|
|pubs.organisational-group||/University of Technology Sydney/Faculty of Science/School of Mathematical and Physical Sciences|
|pubs.organisational-group||/University of Technology Sydney/Strength - IBMD - Initiative for Biomedical Devices|
|pubs.organisational-group||/University of Technology Sydney/Strength - MTEE - Research Centre Materials and Technology for Energy Efficiency|
|pubs.organisational-group||/University of Technology Sydney/Students|
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