Antimony Induced {112}A Faceted Triangular GaAs<inf>1-x</inf>Sb<inf>x</inf>/InP Core/Shell Nanowires and Their Enhanced Optical Quality

Yuan, X; Caroff, P; Wang, F; Guo, Y; Wang, Y; Jackson, HE; Smith, LM; Tan, HH; Jagadish, C

Antimony Induced {112}A Faceted Triangular GaAs<inf>1-x</inf>Sb<inf>x</inf>/InP Core/Shell Nanowires and Their Enhanced Optical Quality

Yuan, X Caroff, P Wang, F

Guo, Y Wang, Y Jackson, HE Smith, LM Tan, HH Jagadish, C

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Publication Type:: Journal Article
Citation:: Advanced Functional Materials, 2015, 25 (33), pp. 5300 - 5308
Issue Date:: 2015-09-01

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Field	Value	Language
dc.contributor.author	Yuan, X	en_US
dc.contributor.author	Caroff, P	en_US
dc.contributor.author	Wang, F https://orcid.org/0000-0001-7403-3305	en_US
dc.contributor.author	Guo, Y	en_US
dc.contributor.author	Wang, Y	en_US
dc.contributor.author	Jackson, HE	en_US
dc.contributor.author	Smith, LM	en_US
dc.contributor.author	Tan, HH	en_US
dc.contributor.author	Jagadish, C	en_US
dc.date.issued	2015-09-01	en_US
dc.identifier.citation	Advanced Functional Materials, 2015, 25 (33), pp. 5300 - 5308	en_US
dc.identifier.issn	1616-301X	en_US
dc.identifier.uri	http://hdl.handle.net/10453/117554
dc.description.abstract	© 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. Mid-infrared GaAs1-xSbx/InP core/shell nanowires are grown coherently with perfectly twin-free zinc blende crystal structure. An unusual triangular InP shell with predominantly {112}A facets instead of {112}B facets is reported. It is found that this polarity preference is due to the surfactant role of Sb, which inhibits InP shell growth rate in the 112-A directions. This behavior reveals a new degree of control and tunability allowed in manipulating nanowire facet geometry and polarity in radial heterostructures by a simple means. Tuning the Sb composition in the core yields controllable intense photoluminescence emission in both the 1.3 and 1.5 μm optical telecommunication windows, up to room temperature for single nanowires. The internal quantum efficiency of the core/shell nanowires is experimentally determined to be as high as 56% at room temperature. Transient Rayleigh scattering analysis brings complementary information, revealing the photoexcited carrier lifetime in the core/shell nanowire to be ≈100 ps at 300 K and ≈800 ps at 10 K. In comparison, the carrier lifetime of core-only nanowire is below the detection limit of the system (25 ps). The demonstrated superior optical quality of the core/shell nanowires and their ideal emission wavelength range makes them highly relevant candidates for near-infrared optoelectronic applications.	en_US
dc.relation.ispartof	Advanced Functional Materials	en_US
dc.relation.isbasedon	10.1002/adfm.201501467	en_US
dc.subject.classification	Materials	en_US
dc.title	Antimony Induced {112}A Faceted Triangular GaAs<inf>1-x</inf>Sb<inf>x</inf>/InP Core/Shell Nanowires and Their Enhanced Optical Quality	en_US
dc.type	Journal Article
utslib.citation.volume	33	en_US
utslib.citation.volume	25	en_US
utslib.for	0205 Optical Physics	en_US
utslib.for	0204 Condensed Matter Physics	en_US
utslib.for	02 Physical Sciences	en_US
utslib.for	03 Chemical Sciences	en_US
utslib.for	09 Engineering	en_US
pubs.embargo.period	Not known	en_US
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Engineering and Information Technology
pubs.organisational-group	/University of Technology Sydney/Faculty of Engineering and Information Technology/School of Electrical and Data Engineering
pubs.organisational-group	/University of Technology Sydney/Strength - IBMD - Initiative for Biomedical Devices
utslib.copyright.status	closed_access
pubs.issue	33	en_US
pubs.publication-status	Published	en_US
pubs.volume	25	en_US

Abstract:

© 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. Mid-infrared GaAs1-xSbx/InP core/shell nanowires are grown coherently with perfectly twin-free zinc blende crystal structure. An unusual triangular InP shell with predominantly {112}A facets instead of {112}B facets is reported. It is found that this polarity preference is due to the surfactant role of Sb, which inhibits InP shell growth rate in the 112-A directions. This behavior reveals a new degree of control and tunability allowed in manipulating nanowire facet geometry and polarity in radial heterostructures by a simple means. Tuning the Sb composition in the core yields controllable intense photoluminescence emission in both the 1.3 and 1.5 μm optical telecommunication windows, up to room temperature for single nanowires. The internal quantum efficiency of the core/shell nanowires is experimentally determined to be as high as 56% at room temperature. Transient Rayleigh scattering analysis brings complementary information, revealing the photoexcited carrier lifetime in the core/shell nanowire to be ≈100 ps at 300 K and ≈800 ps at 10 K. In comparison, the carrier lifetime of core-only nanowire is below the detection limit of the system (25 ps). The demonstrated superior optical quality of the core/shell nanowires and their ideal emission wavelength range makes them highly relevant candidates for near-infrared optoelectronic applications.

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http://hdl.handle.net/10453/117554