Mode Profiling of Semiconductor Nanowire Lasers

Saxena, D; Wang, F; Gao, Q; Mokkapati, S; Tan, HH; Jagadish, C

Mode Profiling of Semiconductor Nanowire Lasers

Saxena, D Wang, F

Gao, Q Mokkapati, S Tan, HH Jagadish, C

Permalink

Publication Type:: Journal Article
Citation:: Nano Letters, 2015, 15 (8), pp. 5342 - 5348
Issue Date:: 2015-08-12

Closed Access

	Filename	Description	Size
	22 Mode Profiling of Semiconductor Nanowire Lasers.pdf	Published Version	3.71 MB	Adobe PDF	View/Open

Copyright Clearance Process

Recently Added
In Progress
Closed Access

This item is closed access and not available.

Full metadata record

Field	Value	Language
dc.contributor.author	Saxena, D	en_US
dc.contributor.author	Wang, F https://orcid.org/0000-0001-7403-3305	en_US
dc.contributor.author	Gao, Q	en_US
dc.contributor.author	Mokkapati, S	en_US
dc.contributor.author	Tan, HH	en_US
dc.contributor.author	Jagadish, C	en_US
dc.date.issued	2015-08-12	en_US
dc.identifier.citation	Nano Letters, 2015, 15 (8), pp. 5342 - 5348	en_US
dc.identifier.issn	1530-6984	en_US
dc.identifier.uri	http://hdl.handle.net/10453/117555
dc.description.abstract	© 2015 American Chemical Society. We experimentally determine the lasing mode(s) in optically pumped semiconductor nanowire lasers. The spatially resolved and angle-resolved far-field emission profiles of single InP nanowire lasers lying horizontally on a SiO<inf>2</inf> substrate are characterized in a microphotoluminescence (μ-PL) setup. The experimentally obtained polarization dependent far-field profiles match very well with numerical simulations and enable unambiguous identification of the lasing mode(s). This technique can be applied to characterize lasing modes in other type of nanolasers that are integrated on a substrate in either vertical or horizontal configurations.	en_US
dc.relation.ispartof	Nano Letters	en_US
dc.relation.isbasedon	10.1021/acs.nanolett.5b01713	en_US
dc.subject.classification	Nanoscience & Nanotechnology	en_US
dc.title	Mode Profiling of Semiconductor Nanowire Lasers	en_US
dc.type	Journal Article
utslib.citation.volume	8	en_US
utslib.citation.volume	15	en_US
utslib.for	0205 Optical Physics	en_US
pubs.embargo.period	Not known	en_US
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Engineering and Information Technology
pubs.organisational-group	/University of Technology Sydney/Faculty of Engineering and Information Technology/School of Electrical and Data Engineering
pubs.organisational-group	/University of Technology Sydney/Strength - IBMD - Initiative for Biomedical Devices
utslib.copyright.status	closed_access
pubs.issue	8	en_US
pubs.publication-status	Published	en_US
pubs.volume	15	en_US

Abstract:

© 2015 American Chemical Society. We experimentally determine the lasing mode(s) in optically pumped semiconductor nanowire lasers. The spatially resolved and angle-resolved far-field emission profiles of single InP nanowire lasers lying horizontally on a SiO2 substrate are characterized in a microphotoluminescence (μ-PL) setup. The experimentally obtained polarization dependent far-field profiles match very well with numerical simulations and enable unambiguous identification of the lasing mode(s). This technique can be applied to characterize lasing modes in other type of nanolasers that are integrated on a substrate in either vertical or horizontal configurations.

Please use this identifier to cite or link to this item:

http://hdl.handle.net/10453/117555