Micrometer-Scale Deep-Level Spectral Photoluminescence from Dislocations in Multicrystalline Silicon

Nguyen, HT; Rougieux, FE; Wang, F; Tan, H; Macdonald, D

Micrometer-Scale Deep-Level Spectral Photoluminescence from Dislocations in Multicrystalline Silicon

Nguyen, HT Rougieux, FE Wang, F

Tan, H Macdonald, D

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Publication Type:: Journal Article
Citation:: IEEE Journal of Photovoltaics, 2015, 5 (3), pp. 799 - 804
Issue Date:: 2015-05-01

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Field	Value	Language
dc.contributor.author	Nguyen, HT	en_US
dc.contributor.author	Rougieux, FE	en_US
dc.contributor.author	Wang, F https://orcid.org/0000-0001-7403-3305	en_US
dc.contributor.author	Tan, H	en_US
dc.contributor.author	Macdonald, D	en_US
dc.date.issued	2015-05-01	en_US
dc.identifier.citation	IEEE Journal of Photovoltaics, 2015, 5 (3), pp. 799 - 804	en_US
dc.identifier.issn	2156-3381	en_US
dc.identifier.uri	http://hdl.handle.net/10453/117559
dc.description.abstract	© 2011-2012 IEEE. Micrometer-scale deep-level spectral photoluminescence (PL) from dislocations is investigated around the subgrain boundaries in multicrystalline silicon. The spatial distribution of the D lines is found to be asymmetrically distributed across the subgrain boundaries, indicating that defects and impurities are decorated almost entirely on one side of the subgrain boundaries. In addition, the D1 and D2 lines are demonstrated to have different origins due to their significantly varying behaviors after processing steps. D1 is found to be enhanced when the dislocations are cleaned of metal impurities, whereas D2 remains unchanged. Finally, the D4 and D3 lines are proposed to have different origins since their energy levels are shifted differently as a function of distance from the subgrain boundaries.	en_US
dc.relation.ispartof	IEEE Journal of Photovoltaics	en_US
dc.relation.isbasedon	10.1109/JPHOTOV.2015.2407158	en_US
dc.title	Micrometer-Scale Deep-Level Spectral Photoluminescence from Dislocations in Multicrystalline Silicon	en_US
dc.type	Journal Article
utslib.citation.volume	3	en_US
utslib.citation.volume	5	en_US
utslib.for	0912 Materials Engineering	en_US
utslib.for	0204 Condensed Matter Physics	en_US
utslib.for	0206 Quantum Physics	en_US
utslib.for	0906 Electrical and Electronic Engineering	en_US
pubs.embargo.period	Not known	en_US
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Engineering and Information Technology
pubs.organisational-group	/University of Technology Sydney/Faculty of Engineering and Information Technology/School of Electrical and Data Engineering
pubs.organisational-group	/University of Technology Sydney/Strength - IBMD - Initiative for Biomedical Devices
utslib.copyright.status	closed_access
pubs.issue	3	en_US
pubs.publication-status	Published	en_US
pubs.volume	5	en_US

Abstract:

© 2011-2012 IEEE. Micrometer-scale deep-level spectral photoluminescence (PL) from dislocations is investigated around the subgrain boundaries in multicrystalline silicon. The spatial distribution of the D lines is found to be asymmetrically distributed across the subgrain boundaries, indicating that defects and impurities are decorated almost entirely on one side of the subgrain boundaries. In addition, the D1 and D2 lines are demonstrated to have different origins due to their significantly varying behaviors after processing steps. D1 is found to be enhanced when the dislocations are cleaned of metal impurities, whereas D2 remains unchanged. Finally, the D4 and D3 lines are proposed to have different origins since their energy levels are shifted differently as a function of distance from the subgrain boundaries.

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http://hdl.handle.net/10453/117559