Nonlinear optical processes in optically trapped InP nanowires

Wang, F; Reece, PJ; Paiman, S; Gao, Q; Tan, HH; Jagadish, C

Nonlinear optical processes in optically trapped InP nanowires

Wang, F

Reece, PJ Paiman, S Gao, Q Tan, HH Jagadish, C

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Publication Type:: Journal Article
Citation:: Nano Letters, 2011, 11 (10), pp. 4149 - 4153
Issue Date:: 2011-10-12

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Field	Value	Language
dc.contributor.author	Wang, F https://orcid.org/0000-0001-7403-3305	en_US
dc.contributor.author	Reece, PJ	en_US
dc.contributor.author	Paiman, S	en_US
dc.contributor.author	Gao, Q	en_US
dc.contributor.author	Tan, HH	en_US
dc.contributor.author	Jagadish, C	en_US
dc.date.issued	2011-10-12	en_US
dc.identifier.citation	Nano Letters, 2011, 11 (10), pp. 4149 - 4153	en_US
dc.identifier.issn	1530-6984	en_US
dc.identifier.uri	http://hdl.handle.net/10453/117567
dc.description.abstract	We report on the observation of nonlinear optical excitation and related photoluminescence from single InP semiconductor nanowires held in suspension using a gradient force optical tweezers. Photoexcitation of free carriers is achieved through absorption of infrared (1.17 eV) photons from the trapping source via a combination of two- and three-photon processes. This was confirmed by power-dependent photoluminescence measurements. Marked differences in spectral features are noted between nonlinear optical excitation and direct excitation and are related to band-filling effects. Direct observation of second harmonic generation in trapped InP nanowires confirms the presence of nonlinear optical processes. © 2011 American Chemical Society.	en_US
dc.relation.ispartof	Nano Letters	en_US
dc.relation.isbasedon	10.1021/nl2020262	en_US
dc.subject.classification	Nanoscience & Nanotechnology	en_US
dc.title	Nonlinear optical processes in optically trapped InP nanowires	en_US
dc.type	Journal Article
utslib.citation.volume	10	en_US
utslib.citation.volume	11	en_US
utslib.for	020503 Nonlinear Optics and Spectroscopy	en_US
pubs.embargo.period	Not known	en_US
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Engineering and Information Technology
pubs.organisational-group	/University of Technology Sydney/Faculty of Engineering and Information Technology/School of Electrical and Data Engineering
pubs.organisational-group	/University of Technology Sydney/Strength - IBMD - Initiative for Biomedical Devices
utslib.copyright.status	closed_access
pubs.issue	10	en_US
pubs.publication-status	Published	en_US
pubs.volume	11	en_US

Abstract:

We report on the observation of nonlinear optical excitation and related photoluminescence from single InP semiconductor nanowires held in suspension using a gradient force optical tweezers. Photoexcitation of free carriers is achieved through absorption of infrared (1.17 eV) photons from the trapping source via a combination of two- and three-photon processes. This was confirmed by power-dependent photoluminescence measurements. Marked differences in spectral features are noted between nonlinear optical excitation and direct excitation and are related to band-filling effects. Direct observation of second harmonic generation in trapped InP nanowires confirms the presence of nonlinear optical processes. © 2011 American Chemical Society.

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