Nonlinear optical processes in optically trapped InP nanowires
- Publication Type:
- Journal Article
- Nano Letters, 2011, 11 (10), pp. 4149 - 4153
- Issue Date:
|34 Nonlinear Optical Processes in Optically Trapped InP Nanowires.pdf||Published Version||3.73 MB|
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We report on the observation of nonlinear optical excitation and related photoluminescence from single InP semiconductor nanowires held in suspension using a gradient force optical tweezers. Photoexcitation of free carriers is achieved through absorption of infrared (1.17 eV) photons from the trapping source via a combination of two- and three-photon processes. This was confirmed by power-dependent photoluminescence measurements. Marked differences in spectral features are noted between nonlinear optical excitation and direct excitation and are related to band-filling effects. Direct observation of second harmonic generation in trapped InP nanowires confirms the presence of nonlinear optical processes. © 2011 American Chemical Society.
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