AA bilayer graphene on Si-terminated SiO2 under electric field

Publisher:
Chinese Physical Society
Publication Type:
Journal Article
Citation:
Chinese Physics B, 2014, 23 (2), pp. 026802- - 026802-
Issue Date:
2014-01
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The AA-stacked bilayer graphene/α-SiO2 (001) interfaces with Si terminated atoms are studied in the presence of an electric field F with different intensities by first principles. AA-stacked bilayer graphene is slightly mis-oriented on SiO2 substrate without electric field and the band gap is 0.557 eV. However, as F increases, the AA-stacked bilayer graphene has its layers gradually vertically shifted with each other and, finally, transfers into AB-stacked bilayer graphene and the band gap reduces to 0.252 eV under 0.015 Hartree.
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