AA bilayer graphene on Si-terminated SiO<inf>2</inf> under electric field
- Publication Type:
- Journal Article
- Chinese Physics B, 2014, 23 (2)
- Issue Date:
The AA-stacked bilayer graphene/α-SiO2 (001) interfaces with Si terminated atoms are studied in the presence of an electric field F with different intensities by first principles. AA-stacked bilayer graphene is slightly mis-oriented on SiO2 substrate without electric field and the band gap is 0.557 eV. However, as F increases, the AA-stacked bilayer graphene has its layers gradually vertically shifted with each other and, finally, transfers into AB-stacked bilayer graphene and the band gap reduces to 0.252 eV under 0.015 Hartree. © 2014 Chinese Physical Society and IOP Publishing Ltd.
Please use this identifier to cite or link to this item: