AA bilayer graphene on Si-terminated SiO<inf>2</inf> under electric field

Liu, HL; Liu, Y; Wang, T; Ao, ZM

AA bilayer graphene on Si-terminated SiO<inf>2</inf> under electric field

Liu, HL Liu, Y Wang, T Ao, ZM

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Publication Type:: Journal Article
Citation:: Chinese Physics B, 2014, 23 (2)
Issue Date:: 2014-02-01

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Field	Value	Language
dc.contributor.author	Liu, HL	en_US
dc.contributor.author	Liu, Y	en_US
dc.contributor.author	Wang, T	en_US
dc.contributor.author	Ao, ZM https://orcid.org/0000-0003-0333-3727	en_US
dc.date.issued	2014-02-01	en_US
dc.identifier.citation	Chinese Physics B, 2014, 23 (2)	en_US
dc.identifier.issn	1674-1056	en_US
dc.identifier.uri	http://hdl.handle.net/10453/117768
dc.description.abstract	The AA-stacked bilayer graphene/α-SiO2 (001) interfaces with Si terminated atoms are studied in the presence of an electric field F with different intensities by first principles. AA-stacked bilayer graphene is slightly mis-oriented on SiO2 substrate without electric field and the band gap is 0.557 eV. However, as F increases, the AA-stacked bilayer graphene has its layers gradually vertically shifted with each other and, finally, transfers into AB-stacked bilayer graphene and the band gap reduces to 0.252 eV under 0.015 Hartree. © 2014 Chinese Physical Society and IOP Publishing Ltd.	en_US
dc.relation.ispartof	Chinese Physics B	en_US
dc.relation.isbasedon	10.1088/1674-1056/23/2/026802	en_US
dc.subject.classification	General Physics	en_US
dc.title	AA bilayer graphene on Si-terminated SiO<inf>2</inf> under electric field	en_US
dc.type	Journal Article
utslib.citation.volume	2	en_US
utslib.citation.volume	23	en_US
utslib.for	010599 Mathematical Physics not elsewhere classified	en_US
utslib.for	0204 Condensed Matter Physics	en_US
utslib.for	01 Mathematical Sciences	en_US
utslib.for	02 Physical Sciences	en_US
utslib.for	09 Engineering	en_US
pubs.embargo.period	Not known	en_US
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Science
pubs.organisational-group	/University of Technology Sydney/Faculty of Science/School of Mathematical and Physical Sciences
pubs.organisational-group	/University of Technology Sydney/Strength - CCET - Centre for Clean Energy Technology
utslib.copyright.status	closed_access
pubs.issue	2	en_US
pubs.publication-status	Published	en_US
pubs.volume	23	en_US

Abstract:

The AA-stacked bilayer graphene/α-SiO2 (001) interfaces with Si terminated atoms are studied in the presence of an electric field F with different intensities by first principles. AA-stacked bilayer graphene is slightly mis-oriented on SiO2 substrate without electric field and the band gap is 0.557 eV. However, as F increases, the AA-stacked bilayer graphene has its layers gradually vertically shifted with each other and, finally, transfers into AB-stacked bilayer graphene and the band gap reduces to 0.252 eV under 0.015 Hartree. © 2014 Chinese Physical Society and IOP Publishing Ltd.

Please use this identifier to cite or link to this item:

http://hdl.handle.net/10453/117768