UV irradiation induced reversible graphene band gap behaviors

Xu, Z; Ao, Z; Chu, D; Li, S

UV irradiation induced reversible graphene band gap behaviors

Xu, Z Ao, Z

Chu, D Li, S

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Publication Type:: Journal Article
Citation:: Journal of Materials Chemistry C, 2016, 4 (36), pp. 8459 - 8465
Issue Date:: 2016-01-01

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Field	Value	Language
dc.contributor.author	Xu, Z	en_US
dc.contributor.author	Ao, Z https://orcid.org/0000-0003-0333-3727	en_US
dc.contributor.author	Chu, D	en_US
dc.contributor.author	Li, S	en_US
dc.date.issued	2016-01-01	en_US
dc.identifier.citation	Journal of Materials Chemistry C, 2016, 4 (36), pp. 8459 - 8465	en_US
dc.identifier.issn	2050-7534	en_US
dc.identifier.uri	http://hdl.handle.net/10453/118489
dc.description.abstract	© 2016 The Royal Society of Chemistry. The nature of zero bandgap has limited the applications of graphene for potential electronic devices, such as p-n junctions and transistors, etc. Here we report a simple methodology that can tune the bandgap of graphene by using ultraviolet (UV) irradiation. Most importantly, such a bandgap transition is reversible and can be controlled by the alternative treatment of UV irradiation and dark storage. In addition, density functional theory (DFT) calculations are performed to reveal the underlying mechanism of bandgap behavior in this reversible transition. Both experimental and computational results demonstrate that it is a promising technology for applications of graphene in electronic devices.	en_US
dc.relation.ispartof	Journal of Materials Chemistry C	en_US
dc.relation.isbasedon	10.1039/c6tc03466g	en_US
dc.title	UV irradiation induced reversible graphene band gap behaviors	en_US
dc.type	Journal Article
utslib.citation.volume	36	en_US
utslib.citation.volume	4	en_US
utslib.for	0306 Physical Chemistry (incl. Structural)	en_US
utslib.for	0912 Materials Engineering	en_US
utslib.for	0303 Macromolecular and Materials Chemistry	en_US
pubs.embargo.period	Not known	en_US
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Science
pubs.organisational-group	/University of Technology Sydney/Faculty of Science/School of Mathematical and Physical Sciences
pubs.organisational-group	/University of Technology Sydney/Strength - CCET - Centre for Clean Energy Technology
utslib.copyright.status	closed_access
pubs.issue	36	en_US
pubs.publication-status	Published	en_US
pubs.volume	4	en_US

Abstract:

© 2016 The Royal Society of Chemistry. The nature of zero bandgap has limited the applications of graphene for potential electronic devices, such as p-n junctions and transistors, etc. Here we report a simple methodology that can tune the bandgap of graphene by using ultraviolet (UV) irradiation. Most importantly, such a bandgap transition is reversible and can be controlled by the alternative treatment of UV irradiation and dark storage. In addition, density functional theory (DFT) calculations are performed to reveal the underlying mechanism of bandgap behavior in this reversible transition. Both experimental and computational results demonstrate that it is a promising technology for applications of graphene in electronic devices.

Please use this identifier to cite or link to this item:

http://hdl.handle.net/10453/118489