Measurement of doping concentration, internal quantum efficiency and non-radiative lifetime of InP nanowires

Wang, F; Gao, Q; Peng, K; Guo, Y; Li, Z; Fu, L; Smith, LM; Tan, HH; Jagadish, C

Measurement of doping concentration, internal quantum efficiency and non-radiative lifetime of InP nanowires

Wang, F

Gao, Q Peng, K Guo, Y Li, Z Fu, L Smith, LM Tan, HH Jagadish, C

Permalink

Publication Type:: Conference Proceeding
Citation:: 2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014, 2014, pp. 272 - 274
Issue Date:: 2014-02-10

Closed Access

	Filename	Description	Size
	do.pdf	Published version	300.17 kB	Adobe PDF	View/Open

Copyright Clearance Process

Recently Added
In Progress
Closed Access

This item is closed access and not available.

Full metadata record

Field	Value	Language
dc.contributor.author	Wang, F https://orcid.org/0000-0001-7403-3305	en_US
dc.contributor.author	Gao, Q	en_US
dc.contributor.author	Peng, K	en_US
dc.contributor.author	Guo, Y	en_US
dc.contributor.author	Li, Z	en_US
dc.contributor.author	Fu, L	en_US
dc.contributor.author	Smith, LM	en_US
dc.contributor.author	Tan, HH	en_US
dc.contributor.author	Jagadish, C	en_US
dc.date.issued	2014-02-10	en_US
dc.identifier.citation	2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014, 2014, pp. 272 - 274	en_US
dc.identifier.isbn	9781479968671	en_US
dc.identifier.uri	http://hdl.handle.net/10453/121219
dc.description.abstract	© 2014 IEEE. We demonstrate an optical method to evaluate the doping concentration, internal quantum efficiency (IQE) and non-radiative lifetime of semiconductor nanowires, through power dependent photoluminescence (PL) and time resolved PL (TRPL) measurement. Combining this method with standard PL and time resolved spectrum, we analyse the quality, band structure and doping distribution of Si doped InP nanowires. The doping result is correlated with electrical measurements of single nano wire device.	en_US
dc.relation.ispartof	2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014	en_US
dc.relation.isbasedon	10.1109/COMMAD.2014.7038709	en_US
dc.title	Measurement of doping concentration, internal quantum efficiency and non-radiative lifetime of InP nanowires	en_US
dc.type	Conference Proceeding
utslib.for	0205 Optical Physics	en_US
utslib.for	1007 Nanotechnology	en_US
pubs.embargo.period	Not known	en_US
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Engineering and Information Technology
pubs.organisational-group	/University of Technology Sydney/Faculty of Engineering and Information Technology/School of Electrical and Data Engineering
pubs.organisational-group	/University of Technology Sydney/Strength - IBMD - Initiative for Biomedical Devices
utslib.copyright.status	closed_access
pubs.publication-status	Published	en_US

Abstract:

© 2014 IEEE. We demonstrate an optical method to evaluate the doping concentration, internal quantum efficiency (IQE) and non-radiative lifetime of semiconductor nanowires, through power dependent photoluminescence (PL) and time resolved PL (TRPL) measurement. Combining this method with standard PL and time resolved spectrum, we analyse the quality, band structure and doping distribution of Si doped InP nanowires. The doping result is correlated with electrical measurements of single nano wire device.

Please use this identifier to cite or link to this item:

http://hdl.handle.net/10453/121219