Measurement of doping concentration, internal quantum efficiency and non-radiative lifetime of InP nanowires

Publisher:
IEEE
Publication Type:
Conference Proceeding
Citation:
2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014, 2014, pp. 272 - 274
Issue Date:
2014-02-10
Full metadata record
Files in This Item:
Filename Description Size
do.pdfPublished version300.17 kB
Adobe PDF
© 2014 IEEE. We demonstrate an optical method to evaluate the doping concentration, internal quantum efficiency (IQE) and non-radiative lifetime of semiconductor nanowires, through power dependent photoluminescence (PL) and time resolved PL (TRPL) measurement. Combining this method with standard PL and time resolved spectrum, we analyse the quality, band structure and doping distribution of Si doped InP nanowires. The doping result is correlated with electrical measurements of single nano wire device.
Please use this identifier to cite or link to this item: