Fabrication and photoluminescence studies of GaN nanopillars

Reddy, NP; Naureen, S; Wang, F; Vora, K; Shahid, N; Karouta, F; Tan, HH; Jagadish, C

Fabrication and photoluminescence studies of GaN nanopillars

Reddy, NP Naureen, S Wang, F

Vora, K Shahid, N Karouta, F Tan, HH Jagadish, C

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Publication Type:: Conference Proceeding
Citation:: 2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014, 2014, pp. 133 - 135
Issue Date:: 2014-02-10

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Field	Value	Language
dc.contributor.author	Reddy, NP	en_US
dc.contributor.author	Naureen, S	en_US
dc.contributor.author	Wang, F https://orcid.org/0000-0001-7403-3305	en_US
dc.contributor.author	Vora, K	en_US
dc.contributor.author	Shahid, N	en_US
dc.contributor.author	Karouta, F	en_US
dc.contributor.author	Tan, HH	en_US
dc.contributor.author	Jagadish, C	en_US
dc.date.issued	2014-02-10	en_US
dc.identifier.citation	2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014, 2014, pp. 133 - 135	en_US
dc.identifier.isbn	9781479968671	en_US
dc.identifier.uri	http://hdl.handle.net/10453/121384
dc.description.abstract	© 2014 IEEE. GaN nanopillar arrays are fabricated by inductively coupled plasma reactive ion etching (ICP-RIE) of lithographically patterned GaN epilayers grown on sapphire substrate. The morphology and optical quality of the nanopillars is investigated by scanning electron microscopy (SEM) and micro-photoluminescence (μ-PL) respectively. The PL intensity of the nanopillars is enhanced by a factor of more than four compared to that of the epitaxial layers. However, a small increase in the full width half maximum (FWHM) of the nanopillar PL spectra is observed.	en_US
dc.relation.ispartof	2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014	en_US
dc.relation.isbasedon	10.1109/COMMAD.2014.7038671	en_US
dc.title	Fabrication and photoluminescence studies of GaN nanopillars	en_US
dc.type	Conference Proceeding
utslib.for	1007 Nanotechnology	en_US
pubs.embargo.period	Not known	en_US
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Engineering and Information Technology
pubs.organisational-group	/University of Technology Sydney/Faculty of Engineering and Information Technology/School of Electrical and Data Engineering
pubs.organisational-group	/University of Technology Sydney/Strength - IBMD - Initiative for Biomedical Devices
utslib.copyright.status	closed_access
pubs.publication-status	Published	en_US

Abstract:

© 2014 IEEE. GaN nanopillar arrays are fabricated by inductively coupled plasma reactive ion etching (ICP-RIE) of lithographically patterned GaN epilayers grown on sapphire substrate. The morphology and optical quality of the nanopillars is investigated by scanning electron microscopy (SEM) and micro-photoluminescence (μ-PL) respectively. The PL intensity of the nanopillars is enhanced by a factor of more than four compared to that of the epitaxial layers. However, a small increase in the full width half maximum (FWHM) of the nanopillar PL spectra is observed.

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http://hdl.handle.net/10453/121384