Fabrication and photoluminescence studies of GaN nanopillars

Publication Type:
Conference Proceeding
Citation:
2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014, 2014, pp. 133 - 135
Issue Date:
2014-02-10
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© 2014 IEEE. GaN nanopillar arrays are fabricated by inductively coupled plasma reactive ion etching (ICP-RIE) of lithographically patterned GaN epilayers grown on sapphire substrate. The morphology and optical quality of the nanopillars is investigated by scanning electron microscopy (SEM) and micro-photoluminescence (μ-PL) respectively. The PL intensity of the nanopillars is enhanced by a factor of more than four compared to that of the epitaxial layers. However, a small increase in the full width half maximum (FWHM) of the nanopillar PL spectra is observed.
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