Strain modulating half-metallicity of semifluorinated GaN nanosheets

Publication Type:
Journal Article
Citation:
Chemical Physics Letters, 2016, 653 pp. 42 - 46
Issue Date:
2016-06-01
Metrics:
Full metadata record
Files in This Item:
Filename Description Size
1-s2.0-S0009261416302512-main.pdfPublished Version1.59 MB
Adobe PDF
© 2016 Published by Elsevier B.V. Strain-dependent half-metallicity of two-bilayer GaN nanosheets (NSs) with fluorinated Ga atoms is studied using density-functional theory. Our results demonstrate that the band gaps in spin-up states and half-metallic gaps vary with biaxial strain and uniaxial compressive strain along the zigzag direction, while the metallic behaviors in spin-down states remain regardless of strain. However, biaxial strain has a better effect on the half-metallicity. Semifluorinated GaN NSs may undergo a structural phase transition from wurtzite to graphite-like phase at high biaxial tension. Therefore, biaxial strain tuning half-metallicity efficiently could provide a viable route to GaN-based spintronic nanodevices.
Please use this identifier to cite or link to this item: