Chemical, vibrational and optical signatures of nitrogen in ZnO nanowires

Publication Type:
Journal Article
Citation:
Materials Science in Semiconductor Processing, 2017, 69 pp. 57 - 61
Issue Date:
2017-10-01
Metrics:
Full metadata record
Files in This Item:
Filename Description Size
z.pdfPublished Version800.96 kB
Adobe PDF
© 2016 Elsevier Ltd ZnO nanowires with various concentrations of nitrogen molecules have been fabricated by remote plasma annealing. X-ray absorption near-edge spectroscopy (XANES) reveals that nitrogen exists mainly in two chemical states: atomic nitrogen substituting oxygen (NO) and molecular nitrogen (N2) weakly bound to the ZnO lattice; the latter state increases substantially with prolonged plasma time. Cathodoluminescence microanalysis of individual nanowires reveals a broad emission band at 3.24 eV at 10 K, attributable to the recombination of a shallow donor and a N2 acceptor state. The Raman modes at 547 and 580 cm−1 from the N-doped nanowires are found to rise in proportion to the N2 concentration, indicating they are related to N2 molecules or defects caused by the incorporation of N2 in the nanowires.
Please use this identifier to cite or link to this item: