Chemical, vibrational and optical signatures of nitrogen in ZnO nanowires

Zhu, L; Khachadorian, S; Hoffmann, A; Phillips, MR; Ton-That, C

Chemical, vibrational and optical signatures of nitrogen in ZnO nanowires

Zhu, L Khachadorian, S Hoffmann, A Phillips, MR

Ton-That, C

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Publication Type:: Journal Article
Citation:: Materials Science in Semiconductor Processing, 2017, 69 pp. 57 - 61
Issue Date:: 2017-10-01

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Field	Value	Language
dc.contributor.author	Zhu, L	en_US
dc.contributor.author	Khachadorian, S	en_US
dc.contributor.author	Hoffmann, A	en_US
dc.contributor.author	Phillips, MR https://orcid.org/0000-0003-1522-9281	en_US
dc.contributor.author	Ton-That, C https://orcid.org/0000-0003-3276-1739	en_US
dc.date.issued	2017-10-01	en_US
dc.identifier.citation	Materials Science in Semiconductor Processing, 2017, 69 pp. 57 - 61	en_US
dc.identifier.issn	1369-8001	en_US
dc.identifier.uri	http://hdl.handle.net/10453/123722
dc.description.abstract	© 2016 Elsevier Ltd ZnO nanowires with various concentrations of nitrogen molecules have been fabricated by remote plasma annealing. X-ray absorption near-edge spectroscopy (XANES) reveals that nitrogen exists mainly in two chemical states: atomic nitrogen substituting oxygen (NO) and molecular nitrogen (N2) weakly bound to the ZnO lattice; the latter state increases substantially with prolonged plasma time. Cathodoluminescence microanalysis of individual nanowires reveals a broad emission band at 3.24 eV at 10 K, attributable to the recombination of a shallow donor and a N2 acceptor state. The Raman modes at 547 and 580 cm−1 from the N-doped nanowires are found to rise in proportion to the N2 concentration, indicating they are related to N2 molecules or defects caused by the incorporation of N2 in the nanowires.	en_US
dc.relation	http://purl.org/au-research/grants/arc/DP150103317
dc.relation.ispartof	Materials Science in Semiconductor Processing	en_US
dc.relation.isbasedon	10.1016/j.mssp.2016.11.038	en_US
dc.subject.classification	Applied Physics	en_US
dc.title	Chemical, vibrational and optical signatures of nitrogen in ZnO nanowires	en_US
dc.type	Journal Article
utslib.citation.volume	69	en_US
utslib.for	0912 Materials Engineering	en_US
pubs.embargo.period	Not known	en_US
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Science
pubs.organisational-group	/University of Technology Sydney/Faculty of Science/School of Mathematical and Physical Sciences
pubs.organisational-group	/University of Technology Sydney/Strength - CCET - Centre for Clean Energy Technology
utslib.copyright.status	closed_access
pubs.publication-status	Published	en_US
pubs.volume	69	en_US

Abstract:

© 2016 Elsevier Ltd ZnO nanowires with various concentrations of nitrogen molecules have been fabricated by remote plasma annealing. X-ray absorption near-edge spectroscopy (XANES) reveals that nitrogen exists mainly in two chemical states: atomic nitrogen substituting oxygen (NO) and molecular nitrogen (N2) weakly bound to the ZnO lattice; the latter state increases substantially with prolonged plasma time. Cathodoluminescence microanalysis of individual nanowires reveals a broad emission band at 3.24 eV at 10 K, attributable to the recombination of a shallow donor and a N2 acceptor state. The Raman modes at 547 and 580 cm−1 from the N-doped nanowires are found to rise in proportion to the N2 concentration, indicating they are related to N2 molecules or defects caused by the incorporation of N2 in the nanowires.

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http://hdl.handle.net/10453/123722