Wafer-scale two-dimensional semiconductors from printed oxide skin of liquid metals

Publication Type:
Journal Article
Citation:
Nature Communications, 2017, 8
Issue Date:
2017-02-17
Metrics:
Full metadata record
Files in This Item:
Filename Description Size
ncomms14482.pdfPublished Version1.92 MB
Adobe PDF
© The Author(s) 2017. A variety of deposition methods for two-dimensional crystals have been demonstrated; however, their wafer-scale deposition remains a challenge. Here we introduce a technique for depositing and patterning of wafer-scale two-dimensional metal chalcogenide compounds by transforming the native interfacial metal oxide layer of low melting point metal precursors (group III and IV) in liquid form. In an oxygen-containing atmosphere, these metals establish an atomically thin oxide layer in a self-limiting reaction. The layer increases the wettability of the liquid metal placed on oxygen-terminated substrates, leaving the thin oxide layer behind. In the case of liquid gallium, the oxide skin attaches exclusively to a substrate and is then sulfurized via a relatively low temperature process. By controlling the surface chemistry of the substrate, we produce large area two-dimensional semiconducting GaS of unit cell thickness (∼1.5 nm). The presented deposition and patterning method offers great commercial potential for wafer-scale processes.
Please use this identifier to cite or link to this item: