Wafer-scale two-dimensional semiconductors from printed oxide skin of liquid metals

Carey, BJ; Ou, JZ; Clark, RM; Berean, KJ; Zavabeti, A; Chesman, ASR; Russo, SP; Lau, DWM; Xu, ZQ; Bao, Q; Kevehei, O; Gibson, BC; Dickey, MD; Kaner, RB; Daeneke, T; Kalantar-Zadeh, K

Wafer-scale two-dimensional semiconductors from printed oxide skin of liquid metals

Carey, BJ Ou, JZ Clark, RM Berean, KJ Zavabeti, A Chesman, ASR Russo, SP Lau, DWM Xu, ZQ

Bao, Q Kevehei, O Gibson, BC Dickey, MD Kaner, RB Daeneke, T Kalantar-Zadeh, K

Permalink

Publication Type:: Journal Article
Citation:: Nature Communications, 2017, 8
Issue Date:: 2017-02-17

Open Access

Copyright Clearance Process

Recently Added
In Progress
Open Access

This item is open access.

Adobe PDF

Download Published VersionAdobe PDF (1.92 MB)

View on publisher's site

View statistics

Full metadata record

Field	Value	Language
dc.contributor.author	Carey, BJ	en_US
dc.contributor.author	Ou, JZ	en_US
dc.contributor.author	Clark, RM	en_US
dc.contributor.author	Berean, KJ	en_US
dc.contributor.author	Zavabeti, A	en_US
dc.contributor.author	Chesman, ASR	en_US
dc.contributor.author	Russo, SP	en_US
dc.contributor.author	Lau, DWM	en_US
dc.contributor.author	Xu, ZQ https://orcid.org/0000-0001-7291-1426	en_US
dc.contributor.author	Bao, Q	en_US
dc.contributor.author	Kevehei, O	en_US
dc.contributor.author	Gibson, BC	en_US
dc.contributor.author	Dickey, MD	en_US
dc.contributor.author	Kaner, RB	en_US
dc.contributor.author	Daeneke, T	en_US
dc.contributor.author	Kalantar-Zadeh, K	en_US
dc.date.available	2017-01-04	en_US
dc.date.issued	2017-02-17	en_US
dc.identifier.citation	Nature Communications, 2017, 8	en_US
dc.identifier.uri	http://hdl.handle.net/10453/123944
dc.description.abstract	© The Author(s) 2017. A variety of deposition methods for two-dimensional crystals have been demonstrated; however, their wafer-scale deposition remains a challenge. Here we introduce a technique for depositing and patterning of wafer-scale two-dimensional metal chalcogenide compounds by transforming the native interfacial metal oxide layer of low melting point metal precursors (group III and IV) in liquid form. In an oxygen-containing atmosphere, these metals establish an atomically thin oxide layer in a self-limiting reaction. The layer increases the wettability of the liquid metal placed on oxygen-terminated substrates, leaving the thin oxide layer behind. In the case of liquid gallium, the oxide skin attaches exclusively to a substrate and is then sulfurized via a relatively low temperature process. By controlling the surface chemistry of the substrate, we produce large area two-dimensional semiconducting GaS of unit cell thickness (∼1.5 nm). The presented deposition and patterning method offers great commercial potential for wafer-scale processes.	en_US
dc.relation.ispartof	Nature Communications	en_US
dc.relation.isbasedon	10.1038/ncomms14482	en_US
dc.title	Wafer-scale two-dimensional semiconductors from printed oxide skin of liquid metals	en_US
dc.type	Journal Article
utslib.citation.volume	8	en_US
utslib.for	0203 Classical Physics	en_US
pubs.embargo.period	Not known	en_US
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Science
pubs.organisational-group	/University of Technology Sydney/Faculty of Science/School of Mathematical and Physical Sciences
pubs.organisational-group	/University of Technology Sydney/Strength - IBMD - Initiative for Biomedical Devices
utslib.copyright.status	open_access
pubs.publication-status	Published	en_US
pubs.volume	8	en_US

Abstract:

© The Author(s) 2017. A variety of deposition methods for two-dimensional crystals have been demonstrated; however, their wafer-scale deposition remains a challenge. Here we introduce a technique for depositing and patterning of wafer-scale two-dimensional metal chalcogenide compounds by transforming the native interfacial metal oxide layer of low melting point metal precursors (group III and IV) in liquid form. In an oxygen-containing atmosphere, these metals establish an atomically thin oxide layer in a self-limiting reaction. The layer increases the wettability of the liquid metal placed on oxygen-terminated substrates, leaving the thin oxide layer behind. In the case of liquid gallium, the oxide skin attaches exclusively to a substrate and is then sulfurized via a relatively low temperature process. By controlling the surface chemistry of the substrate, we produce large area two-dimensional semiconducting GaS of unit cell thickness (∼1.5 nm). The presented deposition and patterning method offers great commercial potential for wafer-scale processes.

Please use this identifier to cite or link to this item:

http://hdl.handle.net/10453/123944