Indirect excitons in hydrogen-doped ZnO

Zhu, L; Lem, LLC; Nguyen, TP; Fair, K; Ali, S; Ford, MJ; Phillips, MR; Ton-That, C

Indirect excitons in hydrogen-doped ZnO

Zhu, L Lem, LLC Nguyen, TP Fair, K

Ali, S

Ford, MJ

Phillips, MR

Ton-That, C

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Publication Type:: Journal Article
Citation:: Journal of Physics D: Applied Physics, 2017, 50 (11)
Issue Date:: 2017-02-17

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Field	Value	Language
dc.contributor.author	Zhu, L	en_US
dc.contributor.author	Lem, LLC	en_US
dc.contributor.author	Nguyen, TP	en_US
dc.contributor.author	Fair, K https://orcid.org/0000-0001-7559-9300	en_US
dc.contributor.author	Ali, S https://orcid.org/0000-0001-7865-2664	en_US
dc.contributor.author	Ford, MJ https://orcid.org/0000-0002-8595-5900	en_US
dc.contributor.author	Phillips, MR https://orcid.org/0000-0003-1522-9281	en_US
dc.contributor.author	Ton-That, C https://orcid.org/0000-0003-3276-1739	en_US
dc.date.issued	2017-02-17	en_US
dc.identifier.citation	Journal of Physics D: Applied Physics, 2017, 50 (11)	en_US
dc.identifier.issn	0022-3727	en_US
dc.identifier.uri	http://hdl.handle.net/10453/124908
dc.description.abstract	© 2017 IOP Publishing Ltd. We present a correlative experimental and theoretical study of bound excitons in hydrogen-doped ZnO, with a particular focus on the dynamics of their metastable state confined in the sub-surface region, using a combination of surface-sensitive characterisation techniques and density functional theory calculations. A metastable sub-surface emission at 3.31 eV found in H-doped ZnO is attributed to the radiative recombination of indirect excitons localised at basal plane stacking faults (BSFs) where the excitonic transition involves electrons bound to bond-centre hydrogen donors in the potential well of the BSF. Additionally, our work shows the electrical transport of ZnO Schottky junctions is dominated by electrons confined at BSFs in the near-surface region.	en_US
dc.relation	http://purl.org/au-research/grants/arc/DP150103317
dc.relation	http://purl.org/au-research/grants/arc/DP160101301
dc.relation.ispartof	Journal of Physics D: Applied Physics	en_US
dc.relation.isbasedon	10.1088/1361-6463/aa5c23	en_US
dc.subject.classification	Applied Physics	en_US
dc.title	Indirect excitons in hydrogen-doped ZnO	en_US
dc.type	Journal Article
utslib.citation.volume	11	en_US
utslib.citation.volume	50	en_US
utslib.for	0203 Classical Physics	en_US
utslib.for	0904 Chemical Engineering	en_US
utslib.for	02 Physical Sciences	en_US
utslib.for	09 Engineering	en_US
pubs.embargo.period	Not known	en_US
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/DVC (Research)
pubs.organisational-group	/University of Technology Sydney/Faculty of Science
pubs.organisational-group	/University of Technology Sydney/Faculty of Science/School of Mathematical and Physical Sciences
pubs.organisational-group	/University of Technology Sydney/Strength - CCET - Centre for Clean Energy Technology
utslib.copyright.status	closed_access
pubs.issue	11	en_US
pubs.publication-status	Published	en_US
pubs.volume	50	en_US

Abstract:

© 2017 IOP Publishing Ltd. We present a correlative experimental and theoretical study of bound excitons in hydrogen-doped ZnO, with a particular focus on the dynamics of their metastable state confined in the sub-surface region, using a combination of surface-sensitive characterisation techniques and density functional theory calculations. A metastable sub-surface emission at 3.31 eV found in H-doped ZnO is attributed to the radiative recombination of indirect excitons localised at basal plane stacking faults (BSFs) where the excitonic transition involves electrons bound to bond-centre hydrogen donors in the potential well of the BSF. Additionally, our work shows the electrical transport of ZnO Schottky junctions is dominated by electrons confined at BSFs in the near-surface region.

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http://hdl.handle.net/10453/124908