Radiative recombination of confined electrons at the MgZnO/ZnO heterojunction interface

Choi, S; Rogers, DJ; Sandana, EV; Bove, P; Teherani, FH; Nenstiel, C; Hoffmann, A; McClintock, R; Razeghi, M; Look, D; Gentle, A; Phillips, MR; Ton-That, C

Radiative recombination of confined electrons at the MgZnO/ZnO heterojunction interface

Choi, S Rogers, DJ Sandana, EV Bove, P Teherani, FH Nenstiel, C Hoffmann, A McClintock, R Razeghi, M Look, D Gentle, A

Phillips, MR

Ton-That, C

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Publication Type:: Journal Article
Citation:: Scientific Reports, 2017, 7 (1)
Issue Date:: 2017-12-01

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Field	Value	Language
dc.contributor.author	Choi, S	en_US
dc.contributor.author	Rogers, DJ	en_US
dc.contributor.author	Sandana, EV	en_US
dc.contributor.author	Bove, P	en_US
dc.contributor.author	Teherani, FH	en_US
dc.contributor.author	Nenstiel, C	en_US
dc.contributor.author	Hoffmann, A	en_US
dc.contributor.author	McClintock, R	en_US
dc.contributor.author	Razeghi, M	en_US
dc.contributor.author	Look, D	en_US
dc.contributor.author	Gentle, A https://orcid.org/0000-0001-8964-0722	en_US
dc.contributor.author	Phillips, MR https://orcid.org/0000-0003-1522-9281	en_US
dc.contributor.author	Ton-That, C https://orcid.org/0000-0003-3276-1739	en_US
dc.date.available	2017-06-28	en_US
dc.date.issued	2017-12-01	en_US
dc.identifier.citation	Scientific Reports, 2017, 7 (1)	en_US
dc.identifier.uri	http://hdl.handle.net/10453/125175
dc.description.abstract	© 2017 The Author(s). We investigate the optical signature of the interface in a single MgZnO/ZnO heterojunction, which exhibits two orders of magnitude lower resistivity and 10 times higher electron mobility compared with the MgZnO/Al2O3 film grown under the same conditions. These impressive transport properties are attributed to increased mobility of electrons at the MgZnO/ZnO heterojunction interface. Depth-resolved cathodoluminescence and photoluminescence studies reveal a 3.2 eV H-band optical emission from the heterointerface, which exhibits excitonic properties and a localization energy of 19.6 meV. The emission is attributed to band-bending due to the polarization discontinuity at the interface, which leads to formation of a triangular quantum well and localized excitons by electrostatic coupling.	en_US
dc.relation	http://purl.org/au-research/grants/arc/DP150103317
dc.relation.ispartof	Scientific Reports	en_US
dc.relation.isbasedon	10.1038/s41598-017-07568-z	en_US
dc.title	Radiative recombination of confined electrons at the MgZnO/ZnO heterojunction interface	en_US
dc.type	Journal Article
utslib.citation.volume	1	en_US
utslib.citation.volume	7	en_US
utslib.for	0399 Other Chemical Sciences	en_US
pubs.embargo.period	Not known	en_US
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Science
pubs.organisational-group	/University of Technology Sydney/Faculty of Science/School of Mathematical and Physical Sciences
pubs.organisational-group	/University of Technology Sydney/Strength - CCET - Centre for Clean Energy Technology
pubs.organisational-group	/University of Technology Sydney/Students
utslib.copyright.status	open_access
pubs.issue	1	en_US
pubs.publication-status	Published	en_US
pubs.volume	7	en_US

Abstract:

© 2017 The Author(s). We investigate the optical signature of the interface in a single MgZnO/ZnO heterojunction, which exhibits two orders of magnitude lower resistivity and 10 times higher electron mobility compared with the MgZnO/Al2O3 film grown under the same conditions. These impressive transport properties are attributed to increased mobility of electrons at the MgZnO/ZnO heterojunction interface. Depth-resolved cathodoluminescence and photoluminescence studies reveal a 3.2 eV H-band optical emission from the heterointerface, which exhibits excitonic properties and a localization energy of 19.6 meV. The emission is attributed to band-bending due to the polarization discontinuity at the interface, which leads to formation of a triangular quantum well and localized excitons by electrostatic coupling.

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http://hdl.handle.net/10453/125175