P-type β-gallium oxide: A new perspective for power and optoelectronic devices

Chikoidze, E; Fellous, A; Perez-Tomas, A; Sauthier, G; Tchelidze, T; Ton-That, C; Huynh, TT; Phillips, M; Russell, S; Jennings, M; Berini, B; Jomard, F; Dumont, Y

P-type β-gallium oxide: A new perspective for power and optoelectronic devices

Chikoidze, E Fellous, A Perez-Tomas, A Sauthier, G Tchelidze, T Ton-That, C

Huynh, TT Phillips, M

Russell, S Jennings, M Berini, B Jomard, F Dumont, Y

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Publication Type:: Journal Article
Citation:: Materials Today Physics, 2017, 3 pp. 118 - 126
Issue Date:: 2017-12-01

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Field	Value	Language
dc.contributor.author	Chikoidze, E	en_US
dc.contributor.author	Fellous, A	en_US
dc.contributor.author	Perez-Tomas, A	en_US
dc.contributor.author	Sauthier, G	en_US
dc.contributor.author	Tchelidze, T	en_US
dc.contributor.author	Ton-That, C https://orcid.org/0000-0003-3276-1739	en_US
dc.contributor.author	Huynh, TT	en_US
dc.contributor.author	Phillips, M https://orcid.org/0000-0003-1522-9281	en_US
dc.contributor.author	Russell, S	en_US
dc.contributor.author	Jennings, M	en_US
dc.contributor.author	Berini, B	en_US
dc.contributor.author	Jomard, F	en_US
dc.contributor.author	Dumont, Y	en_US
dc.date.issued	2017-12-01	en_US
dc.identifier.citation	Materials Today Physics, 2017, 3 pp. 118 - 126	en_US
dc.identifier.uri	http://hdl.handle.net/10453/125566
dc.description.abstract	© 2017 Elsevier Ltd Wide-bandgap semiconductors (WBG) are expected to be applied to solid-state lighting and power devices, supporting a future energy-saving society. Here we present evidence of p-type conduction in the undoped WBG β-Ga 2 O 3 . Hole conduction, established by Hall and Seebeck measurements, is consistent with findings from photoemission and cathodoluminescence spectroscopies. The ionization energy of the acceptor level was measured to be 1.1eV above the valence band edge. The gallium vacancy was identified as a possible acceptor candidate based on thermodynamic equilibrium Ga 2 O 3 (crystal) – O 2 (gas) system calculations (Kroger theory) which revealed a window without oxygen vacancy compensation. The possibility of fabricating large diameter wafers of β-Ga 2 O 3 of p and n type nature, provides new avenues for high power and deep UV-optoelectronic devices.	en_US
dc.relation.ispartof	Materials Today Physics	en_US
dc.relation.isbasedon	10.1016/j.mtphys.2017.10.002	en_US
dc.title	P-type β-gallium oxide: A new perspective for power and optoelectronic devices	en_US
dc.type	Journal Article
utslib.citation.volume	3	en_US
utslib.for	0203 Classical Physics	en_US
pubs.embargo.period	Not known	en_US
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Science
pubs.organisational-group	/University of Technology Sydney/Faculty of Science/School of Mathematical and Physical Sciences
pubs.organisational-group	/University of Technology Sydney/Strength - CCET - Centre for Clean Energy Technology
utslib.copyright.status	closed_access
pubs.publication-status	Published	en_US
pubs.volume	3	en_US

Abstract:

© 2017 Elsevier Ltd Wide-bandgap semiconductors (WBG) are expected to be applied to solid-state lighting and power devices, supporting a future energy-saving society. Here we present evidence of p-type conduction in the undoped WBG β-Ga 2 O 3 . Hole conduction, established by Hall and Seebeck measurements, is consistent with findings from photoemission and cathodoluminescence spectroscopies. The ionization energy of the acceptor level was measured to be 1.1eV above the valence band edge. The gallium vacancy was identified as a possible acceptor candidate based on thermodynamic equilibrium Ga 2 O 3 (crystal) – O 2 (gas) system calculations (Kroger theory) which revealed a window without oxygen vacancy compensation. The possibility of fabricating large diameter wafers of β-Ga 2 O 3 of p and n type nature, provides new avenues for high power and deep UV-optoelectronic devices.

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http://hdl.handle.net/10453/125566