Photophysics of GaN single-photon emitters in the visible spectral range

Berhane, AM; Jeong, KY; Bradac, C; Walsh, M; Englund, D; Toth, M; Aharonovich, I

Photophysics of GaN single-photon emitters in the visible spectral range

Berhane, AM

Jeong, KY Bradac, C

Walsh, M Englund, D Toth, M

Aharonovich, I

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Publication Type:: Journal Article
Citation:: Physical Review B, 2018, 97 (16)
Issue Date:: 2018-04-12

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Field	Value	Language
dc.contributor.author	Berhane, AM https://orcid.org/0000-0002-8983-6781	en_US
dc.contributor.author	Jeong, KY	en_US
dc.contributor.author	Bradac, C https://orcid.org/0000-0002-6673-7238	en_US
dc.contributor.author	Walsh, M	en_US
dc.contributor.author	Englund, D	en_US
dc.contributor.author	Toth, M https://orcid.org/0000-0003-1564-4899	en_US
dc.contributor.author	Aharonovich, I https://orcid.org/0000-0003-4304-3935	en_US
dc.date.issued	2018-04-12	en_US
dc.identifier.citation	Physical Review B, 2018, 97 (16)	en_US
dc.identifier.issn	2469-9950	en_US
dc.identifier.uri	http://hdl.handle.net/10453/126915
dc.description.abstract	© 2018 American Physical Society. In this work, we present a detailed photophysical analysis of recently discovered, optically stable single-photon emitters (SPEs) in gallium nitride (GaN). Temperature-resolved photoluminescence measurements reveal that the emission lines at 4 K are three orders of magnitude broader than the transform-limited width expected from excited-state lifetime measurements. The broadening is ascribed to ultrafast spectral diffusion. The photophysical study on several emitters at room temperature (RT) reveals an average brightness of (427±215)kCounts/s. Finally, polarization measurements from 14 emitters are used to determine visibility as well as dipole orientation of defect systems within the GaN crystal. Our results underpin some of the fundamental properties of SPEs in GaN both at cryogenic and RT, and define the benchmark for future work in GaN-based single-photon technologies.	en_US
dc.relation	http://purl.org/au-research/grants/arc/DP140102721
dc.relation	http://purl.org/au-research/grants/arc/DP180100077
dc.relation.ispartof	Physical Review B	en_US
dc.relation.isbasedon	10.1103/PhysRevB.97.165202	en_US
dc.title	Photophysics of GaN single-photon emitters in the visible spectral range	en_US
dc.type	Journal Article
utslib.citation.volume	16	en_US
utslib.citation.volume	97	en_US
utslib.for	0205 Optical Physics	en_US
utslib.for	0912 Materials Engineering	en_US
pubs.embargo.period	Not known	en_US
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Science
pubs.organisational-group	/University of Technology Sydney/Faculty of Science/School of Mathematical and Physical Sciences
pubs.organisational-group	/University of Technology Sydney/Strength - IBMD - Initiative for Biomedical Devices
pubs.organisational-group	/University of Technology Sydney/Strength - MTEE - Research Centre Materials and Technology for Energy Efficiency
pubs.organisational-group	/University of Technology Sydney/Students
utslib.copyright.status	open_access
pubs.issue	16	en_US
pubs.publication-status	Published	en_US
pubs.volume	97	en_US

Abstract:

© 2018 American Physical Society. In this work, we present a detailed photophysical analysis of recently discovered, optically stable single-photon emitters (SPEs) in gallium nitride (GaN). Temperature-resolved photoluminescence measurements reveal that the emission lines at 4 K are three orders of magnitude broader than the transform-limited width expected from excited-state lifetime measurements. The broadening is ascribed to ultrafast spectral diffusion. The photophysical study on several emitters at room temperature (RT) reveals an average brightness of (427±215)kCounts/s. Finally, polarization measurements from 14 emitters are used to determine visibility as well as dipole orientation of defect systems within the GaN crystal. Our results underpin some of the fundamental properties of SPEs in GaN both at cryogenic and RT, and define the benchmark for future work in GaN-based single-photon technologies.

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http://hdl.handle.net/10453/126915