A facile method for bright, colour-tunable light-emitting diodes based on Ga-doped ZnO nanorods

Rahman, MA; Scott, JA; Gentle, A; Phillips, MR; Ton-That, C

A facile method for bright, colour-tunable light-emitting diodes based on Ga-doped ZnO nanorods

Rahman, MA

Scott, JA Gentle, A

Phillips, MR

Ton-That, C

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Publication Type:: Journal Article
Citation:: Nanotechnology, 2018, 29 (42)
Issue Date:: 2018-08-17

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Field	Value	Language
dc.contributor.author	Rahman, MA https://orcid.org/0000-0002-5433-4124	en_US
dc.contributor.author	Scott, JA	en_US
dc.contributor.author	Gentle, A https://orcid.org/0000-0001-8964-0722	en_US
dc.contributor.author	Phillips, MR https://orcid.org/0000-0003-1522-9281	en_US
dc.contributor.author	Ton-That, C https://orcid.org/0000-0003-3276-1739	en_US
dc.date.available	2020-05-25T19:04:59Z
dc.date.issued	2018-08-17	en_US
dc.identifier.citation	Nanotechnology, 2018, 29 (42)	en_US
dc.identifier.issn	0957-4484	en_US
dc.identifier.uri	http://hdl.handle.net/10453/127039
dc.description.abstract	© 2018 IOP Publishing Ltd. Bottom-up fabrication of nanowire-based devices is highly attractive for oxide photonic devices because of high light extraction efficiency; however, unsatisfactory electrical injection into ZnO and poor carrier transport properties of nanowires severely limit their practical applications. Here, we demonstrate that ZnO nanorods doped with Ga donors by in situ dopant incorporation during vapour-solid growth exhibit superior optoelectronic properties that exceed those currently synthesised by chemical vapour deposition, and accordingly can be electrically integrated into Si-based photonic devices. Significantly, the doping method was found to improve the nanorod quality by decreasing the concentration of point defects. Light-emitting diodes (LEDs) fabricated from the Ga-doped ZnO nanorod/p-Si heterojunction display bright and colour-tunable electroluminescence (EL). These nanorod LEDs possess a dramatically enhanced performance and an order of magnitude higher EL compared with equivalent devices fabricated with undoped nanorods. These results point to an effective route for large-scale fabrication of conductive, single-crystalline ZnO nanorods for photonic and optoelectronic applications.	en_US
dc.relation	http://purl.org/au-research/grants/arc/DP150103317
dc.relation.ispartof	Nanotechnology	en_US
dc.relation.isbasedon	10.1088/1361-6528/aad7d2	en_US
dc.subject.classification	Nanoscience & Nanotechnology	en_US
dc.title	A facile method for bright, colour-tunable light-emitting diodes based on Ga-doped ZnO nanorods	en_US
dc.type	Journal Article
utslib.citation.volume	42	en_US
utslib.citation.volume	29	en_US
utslib.for	1007 Nanotechnology	en_US
utslib.for	0205 Optical Physics	en_US
pubs.embargo.period	Not known	en_US
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Science
pubs.organisational-group	/University of Technology Sydney/Faculty of Science/School of Mathematical and Physical Sciences
pubs.organisational-group	/University of Technology Sydney/Strength - CCET - Centre for Clean Energy Technology
utslib.copyright.status	open_access
pubs.issue	42	en_US
pubs.publication-status	Published	en_US
pubs.volume	29	en_US

Abstract:

© 2018 IOP Publishing Ltd. Bottom-up fabrication of nanowire-based devices is highly attractive for oxide photonic devices because of high light extraction efficiency; however, unsatisfactory electrical injection into ZnO and poor carrier transport properties of nanowires severely limit their practical applications. Here, we demonstrate that ZnO nanorods doped with Ga donors by in situ dopant incorporation during vapour-solid growth exhibit superior optoelectronic properties that exceed those currently synthesised by chemical vapour deposition, and accordingly can be electrically integrated into Si-based photonic devices. Significantly, the doping method was found to improve the nanorod quality by decreasing the concentration of point defects. Light-emitting diodes (LEDs) fabricated from the Ga-doped ZnO nanorod/p-Si heterojunction display bright and colour-tunable electroluminescence (EL). These nanorod LEDs possess a dramatically enhanced performance and an order of magnitude higher EL compared with equivalent devices fabricated with undoped nanorods. These results point to an effective route for large-scale fabrication of conductive, single-crystalline ZnO nanorods for photonic and optoelectronic applications.

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http://hdl.handle.net/10453/127039