Quantum emission from atomic defects in wide-bandgap semiconductors

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Conference Proceeding
Summer Topicals Meeting Series, SUM 2017, 2017, pp. 103 - 104
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© 2017 IEEE. Non-classical light sources, such as atoms and atom-like emitters play central roles in many areas of quantum information processing with applications as single photon generators, sources for nonlinearity and quantum memories. Solid-state quantum emitters have attracted growing interest due to the promise of combining remarkable optical properties with the convenience of scalability [1]. In recent years, there has been tremendous progress in developing quantum emitter systems based on crystallographic defects in wide-bandgap semiconductors. Nitrogen vacancies (NV) in diamond were among the first studied systems due to the well-defined optical transitions as well as electronic spin states that can be controlled optically. Quantum spins in diamond are among the most advanced systems in solid state for quantum based technologies such as quantum computing or quantum sensing [2]. Nevertheless, solid-state quantum emitters are not only limited to diamond and efforts to engineer single photon emitters (SPE) based on atom-like defects in scalable system have expanded beyond NV centers in diamond. Similar quantum emitters have been discovered in many other wide-bandgap host materials, including silicon carbide (SiC), III-nitride semiconductors such as gallium nitride (GaN) and aluminum nitride (AlN), and layered materials such as hexagonal boron nitride (hBN) [1]. Here, we will review our recent progress in developing and characterizing new quantum emitters in wide-bandgap semiconductors, and consider their applications as quantum light sources and sensors.
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