Effects of plasma-treatment on the electrical and optoelectronic properties of layered black phosphorus

Kuriakose, S; Ahmed, T; Balendhran, S; Collis, GE; Bansal, V; Aharonovich, I; Sriram, S; Bhaskaran, M; Walia, S

Effects of plasma-treatment on the electrical and optoelectronic properties of layered black phosphorus

Kuriakose, S Ahmed, T Balendhran, S Collis, GE Bansal, V Aharonovich, I

Sriram, S Bhaskaran, M Walia, S

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Publication Type:: Journal Article
Citation:: Applied Materials Today, 2018, 12 pp. 244 - 249
Issue Date:: 2018-09-01

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Field	Value	Language
dc.contributor.author	Kuriakose, S	en_US
dc.contributor.author	Ahmed, T	en_US
dc.contributor.author	Balendhran, S	en_US
dc.contributor.author	Collis, GE	en_US
dc.contributor.author	Bansal, V	en_US
dc.contributor.author	Aharonovich, I https://orcid.org/0000-0003-4304-3935	en_US
dc.contributor.author	Sriram, S	en_US
dc.contributor.author	Bhaskaran, M	en_US
dc.contributor.author	Walia, S	en_US
dc.date.issued	2018-09-01	en_US
dc.identifier.citation	Applied Materials Today, 2018, 12 pp. 244 - 249	en_US
dc.identifier.uri	http://hdl.handle.net/10453/128854
dc.description.abstract	© 2018 Elsevier Ltd Exfoliated few-layer black-phosphorus (BP) has been explored for a variety of electrical and optoelectronic applications. Plasma-assisted thinning of BP has emerged as an exciting pathway to achieve BP crystals of desired thickness. However, to fully realise the true potential of plasma-assisted thinning of BP and other emerging 2D materials, it is critical to understand the effects of different plasma environments on the electrical and optoelectronic properties of the resultant material. Here, we investigate the influence of Ar and O2 plasma on the electrical and optoelectronic properties of plasma-treated BP flakes. It is revealed that by manipulating the environment under which BP is exposed to the plasma, it is possible to engineer defects that lead to new photoluminescence (PL) emission peaks without compromising the switching ratios or carrier mobilities of BP-based field effect transistors (FETs). Overall, our study finds the use of O2 plasma as a more suitable approach to retain and enrich the intrinsic (opto)electronic properties of BP. Additionally, our study, for the first time, experimentally reveals the ability of BP to respond to UV excitation.	en_US
dc.relation.ispartof	Applied Materials Today	en_US
dc.relation.isbasedon	10.1016/j.apmt.2018.06.001	en_US
dc.title	Effects of plasma-treatment on the electrical and optoelectronic properties of layered black phosphorus	en_US
dc.type	Journal Article
utslib.citation.volume	12	en_US
utslib.for	0204 Condensed Matter Physics	en_US
utslib.for	0912 Materials Engineering	en_US
utslib.for	1007 Nanotechnology	en_US
pubs.embargo.period	Not known	en_US
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Science
pubs.organisational-group	/University of Technology Sydney/Faculty of Science/School of Mathematical and Physical Sciences
pubs.organisational-group	/University of Technology Sydney/Strength - IBMD - Initiative for Biomedical Devices
utslib.copyright.status	closed_access
pubs.publication-status	Published	en_US
pubs.volume	12	en_US

Abstract:

© 2018 Elsevier Ltd Exfoliated few-layer black-phosphorus (BP) has been explored for a variety of electrical and optoelectronic applications. Plasma-assisted thinning of BP has emerged as an exciting pathway to achieve BP crystals of desired thickness. However, to fully realise the true potential of plasma-assisted thinning of BP and other emerging 2D materials, it is critical to understand the effects of different plasma environments on the electrical and optoelectronic properties of the resultant material. Here, we investigate the influence of Ar and O2 plasma on the electrical and optoelectronic properties of plasma-treated BP flakes. It is revealed that by manipulating the environment under which BP is exposed to the plasma, it is possible to engineer defects that lead to new photoluminescence (PL) emission peaks without compromising the switching ratios or carrier mobilities of BP-based field effect transistors (FETs). Overall, our study finds the use of O2 plasma as a more suitable approach to retain and enrich the intrinsic (opto)electronic properties of BP. Additionally, our study, for the first time, experimentally reveals the ability of BP to respond to UV excitation.

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http://hdl.handle.net/10453/128854