Synthesis, characterization, and optical properties of In<inf>2</inf>O<inf>3</inf>semiconductor nanowires

Publication Type:
Journal Article
Citation:
Inorganic Chemistry, 2007, 46 (12), pp. 4778 - 4780
Issue Date:
2007-06-11
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In2O3semiconductor nanowires were synthesized by the chemical vapor deposition method through carbon thermal reduction at 900 °C with 95% Ar and 5% O2gas flow. The In2O3nanowires were characterized by field emission scanning electron microscopy (FE-SEM), high-resolution transmission electron microscopy (HRTEM), and photoluminescence spectroscopy (PL). For the first time, we observed the formation of corundum-type h-In2O3nanowires and branched In2O3nanowires. The PL spectra of In2O3nanowires show strong visible red emission at 1.85 eV (670 nm) at low temperature, possibly caused by a small amount of oxygen vacancies in the nanowire crystal structure. © 2007 American Chemical Society.
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