Synthesis, characterization, and optical properties of In<inf>2</inf>O <inf>3</inf> semiconductor nanowires

Wang, G; Park, J; Wexler, D; Park, MS; Ahn, JH

Synthesis, characterization, and optical properties of In<inf>2</inf>O <inf>3</inf> semiconductor nanowires

Wang, G

Park, J Wexler, D Park, MS Ahn, JH

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Publication Type:: Journal Article
Citation:: Inorganic Chemistry, 2007, 46 (12), pp. 4778 - 4780
Issue Date:: 2007-06-11

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Field	Value	Language
dc.contributor.author	Wang, G https://orcid.org/0000-0003-4295-8578	en_US
dc.contributor.author	Park, J	en_US
dc.contributor.author	Wexler, D	en_US
dc.contributor.author	Park, MS	en_US
dc.contributor.author	Ahn, JH	en_US
dc.date.issued	2007-06-11	en_US
dc.identifier.citation	Inorganic Chemistry, 2007, 46 (12), pp. 4778 - 4780	en_US
dc.identifier.issn	0020-1669	en_US
dc.identifier.uri	http://hdl.handle.net/10453/13115
dc.description.abstract	In2O3 semiconductor nanowires were synthesized by the chemical vapor deposition method through carbon thermal reduction at 900 °C with 95% Ar and 5% O2 gas flow. The In2O3 nanowires were characterized by field emission scanning electron microscopy (FE-SEM), high-resolution transmission electron microscopy (HRTEM), and photoluminescence spectroscopy (PL). For the first time, we observed the formation of corundum-type h-In2O3 nanowires and branched In2O3 nanowires. The PL spectra of In2O 3 nanowires show strong visible red emission at 1.85 eV (670 nm) at low temperature, possibly caused by a small amount of oxygen vacancies in the nanowire crystal structure. © 2007 American Chemical Society.	en_US
dc.relation	http://purl.org/au-research/grants/arc/DP0559891
dc.relation.ispartof	Inorganic Chemistry	en_US
dc.relation.isbasedon	10.1021/ic700386z	en_US
dc.subject.classification	Inorganic & Nuclear Chemistry	en_US
dc.subject.mesh	Indium	en_US
dc.subject.mesh	Microscopy, Electron	en_US
dc.subject.mesh	Luminescent Measurements	en_US
dc.subject.mesh	Spectrum Analysis	en_US
dc.subject.mesh	Semiconductors	en_US
dc.subject.mesh	Nanowires	en_US
dc.title	Synthesis, characterization, and optical properties of In<inf>2</inf>O <inf>3</inf> semiconductor nanowires	en_US
dc.type	Journal Article
utslib.citation.volume	12	en_US
utslib.citation.volume	46	en_US
utslib.for	0904 Chemical Engineering	en_US
utslib.for	0302 Inorganic Chemistry	en_US
utslib.for	0306 Physical Chemistry (incl. Structural)	en_US
utslib.for	0399 Other Chemical Sciences	en_US
pubs.embargo.period	Not known	en_US
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Science
pubs.organisational-group	/University of Technology Sydney/Faculty of Science/School of Mathematical and Physical Sciences
pubs.organisational-group	/University of Technology Sydney/Strength - CCET - Centre for Clean Energy Technology
utslib.copyright.status	closed_access
pubs.issue	12	en_US
pubs.publication-status	Published	en_US
pubs.volume	46	en_US

Abstract:

In2O3 semiconductor nanowires were synthesized by the chemical vapor deposition method through carbon thermal reduction at 900 °C with 95% Ar and 5% O2 gas flow. The In2O3 nanowires were characterized by field emission scanning electron microscopy (FE-SEM), high-resolution transmission electron microscopy (HRTEM), and photoluminescence spectroscopy (PL). For the first time, we observed the formation of corundum-type h-In2O3 nanowires and branched In2O3 nanowires. The PL spectra of In2O 3 nanowires show strong visible red emission at 1.85 eV (670 nm) at low temperature, possibly caused by a small amount of oxygen vacancies in the nanowire crystal structure. © 2007 American Chemical Society.

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