Electrochemical properties of Si thin film prepared by pulsed laser deposition for lithium ion micro-batteries

Park, MS; Wang, GX; Liu, HK; Dou, SX

Electrochemical properties of Si thin film prepared by pulsed laser deposition for lithium ion micro-batteries

Park, MS Wang, GX

Liu, HK Dou, SX

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Publication Type:: Journal Article
Citation:: Electrochimica Acta, 2006, 51 (25), pp. 5246 - 5249
Issue Date:: 2006-07-28

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Field	Value	Language
dc.contributor.author	Park, MS	en_US
dc.contributor.author	Wang, GX https://orcid.org/0000-0003-4295-8578	en_US
dc.contributor.author	Liu, HK	en_US
dc.contributor.author	Dou, SX	en_US
dc.date.issued	2006-07-28	en_US
dc.identifier.citation	Electrochimica Acta, 2006, 51 (25), pp. 5246 - 5249	en_US
dc.identifier.issn	0013-4686	en_US
dc.identifier.uri	http://hdl.handle.net/10453/13117
dc.description.abstract	Si thin films were deposited directly on stainless steel substrates that act as current collectors using the pulsed laser deposition (PLD) technique. Amorphous Si films of different thicknesses were obtained at the Ar gas pressure of 5 × 10-5 Torr and a temperature of 500 °C but different deposition times. The microstructure and morphology of the films were characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD) and atomic force microscopy (AFM). The anodic electrochemical performance of the films was examined in the range of 0.005-1.5 V, which revealed excellent cyclic stability without any large capacity fade up to the 70th cycle. The PLD process was suitable for improving the density and adhesion behavior of the films. © 2006 Elsevier Ltd. All rights reserved.	en_US
dc.relation.ispartof	Electrochimica Acta	en_US
dc.relation.isbasedon	10.1016/j.electacta.2006.01.045	en_US
dc.subject.classification	Energy	en_US
dc.title	Electrochemical properties of Si thin film prepared by pulsed laser deposition for lithium ion micro-batteries	en_US
dc.type	Journal Article
utslib.citation.volume	25	en_US
utslib.citation.volume	51	en_US
utslib.for	0306 Physical Chemistry (incl. Structural)	en_US
utslib.for	02 Physical Sciences	en_US
utslib.for	03 Chemical Sciences	en_US
utslib.for	09 Engineering	en_US
pubs.embargo.period	Not known	en_US
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Science
pubs.organisational-group	/University of Technology Sydney/Faculty of Science/School of Mathematical and Physical Sciences
pubs.organisational-group	/University of Technology Sydney/Strength - CCET - Centre for Clean Energy Technology
utslib.copyright.status	closed_access
pubs.issue	25	en_US
pubs.publication-status	Published	en_US
pubs.volume	51	en_US

Abstract:

Si thin films were deposited directly on stainless steel substrates that act as current collectors using the pulsed laser deposition (PLD) technique. Amorphous Si films of different thicknesses were obtained at the Ar gas pressure of 5 × 10-5 Torr and a temperature of 500 °C but different deposition times. The microstructure and morphology of the films were characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD) and atomic force microscopy (AFM). The anodic electrochemical performance of the films was examined in the range of 0.005-1.5 V, which revealed excellent cyclic stability without any large capacity fade up to the 70th cycle. The PLD process was suitable for improving the density and adhesion behavior of the films. © 2006 Elsevier Ltd. All rights reserved.

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http://hdl.handle.net/10453/13117