Qubit Device Integration Using Advanced Semiconductor Manufacturing Process Technology

Pillarisetty, R; Thomas, N; George, HC; Singh, K; Roberts, J; Lampert, L; Amin, P; Watson, TF; Zheng, G; Torres, J; Metz, M; Kotlyar, R; Keys, P; Boter, JM; Dehollain, JP; Droulers, G; Eenink, G; Li, R; Massa, L; Sabbagh, D; Samkharadze, N; Volk, C; Wuetz, BP; Zwerver, AM; Veldhorst, M; Scappucci, G; Vandersypen, LMK; Clarke, JS

Qubit Device Integration Using Advanced Semiconductor Manufacturing Process Technology

Pillarisetty, R Thomas, N George, HC Singh, K Roberts, J Lampert, L Amin, P Watson, TF Zheng, G Torres, J Metz, M Kotlyar, R Keys, P Boter, JM Dehollain, JP

Droulers, G Eenink, G Li, R Massa, L Sabbagh, D Samkharadze, N Volk, C Wuetz, BP Zwerver, AM Veldhorst, M Scappucci, G Vandersypen, LMK Clarke, JS

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Publication Type:: Conference Proceeding
Citation:: Technical Digest - International Electron Devices Meeting, IEDM, 2019, 2018-December pp. 6.3.1 - 6.3.4
Issue Date:: 2019-01-16

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Field	Value	Language
dc.contributor.author	Pillarisetty, R	en_US
dc.contributor.author	Thomas, N	en_US
dc.contributor.author	George, HC	en_US
dc.contributor.author	Singh, K	en_US
dc.contributor.author	Roberts, J	en_US
dc.contributor.author	Lampert, L	en_US
dc.contributor.author	Amin, P	en_US
dc.contributor.author	Watson, TF	en_US
dc.contributor.author	Zheng, G	en_US
dc.contributor.author	Torres, J	en_US
dc.contributor.author	Metz, M	en_US
dc.contributor.author	Kotlyar, R	en_US
dc.contributor.author	Keys, P	en_US
dc.contributor.author	Boter, JM	en_US
dc.contributor.author	Dehollain, JP https://orcid.org/0000-0002-0425-4345	en_US
dc.contributor.author	Droulers, G	en_US
dc.contributor.author	Eenink, G	en_US
dc.contributor.author	Li, R	en_US
dc.contributor.author	Massa, L	en_US
dc.contributor.author	Sabbagh, D	en_US
dc.contributor.author	Samkharadze, N	en_US
dc.contributor.author	Volk, C	en_US
dc.contributor.author	Wuetz, BP	en_US
dc.contributor.author	Zwerver, AM	en_US
dc.contributor.author	Veldhorst, M	en_US
dc.contributor.author	Scappucci, G	en_US
dc.contributor.author	Vandersypen, LMK	en_US
dc.contributor.author	Clarke, JS	en_US
dc.date.issued	2019-01-16	en_US
dc.identifier.citation	Technical Digest - International Electron Devices Meeting, IEDM, 2019, 2018-December pp. 6.3.1 - 6.3.4	en_US
dc.identifier.isbn	9781728119878	en_US
dc.identifier.issn	0163-1918	en_US
dc.identifier.uri	http://hdl.handle.net/10453/133865
dc.description.abstract	© 2018 IEEE. Quantum computing's value proposition of an exponential speedup in computing power for certain applications has propelled a vast array of research across the globe. While several different physical implementations of device level qubits are being investigated, semiconductor spin qubits have many similarities to scaled transistors. In this article, we discuss the device/integration of full 300mm based spin qubit devices. This includes the development of (i) a 28 Si epitaxial module ecosystem for growing isotopically pure substrates with among the best Hall mobility at these oxide thicknesses, (ii) a custom 300mm qubit testchip and integration/device line, and (iii) a novel dual nested gate integration process for creating quantum dots.	en_US
dc.relation.ispartof	Technical Digest - International Electron Devices Meeting, IEDM	en_US
dc.relation.isbasedon	10.1109/IEDM.2018.8614624	en_US
dc.title	Qubit Device Integration Using Advanced Semiconductor Manufacturing Process Technology	en_US
dc.type	Conference Proceeding
utslib.citation.volume	2018-December	en_US
utslib.for	0802 Computation Theory and Mathematics	en_US
utslib.for	0805 Distributed Computing	en_US
pubs.embargo.period	Not known	en_US
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Science
pubs.organisational-group	/University of Technology Sydney/Faculty of Science/School of Mathematical and Physical Sciences
pubs.organisational-group	/University of Technology Sydney/Strength - QSI - Centre for Quantum Software and Information
utslib.copyright.status	closed_access
pubs.publication-status	Published	en_US
pubs.volume	2018-December	en_US

Abstract:

© 2018 IEEE. Quantum computing's value proposition of an exponential speedup in computing power for certain applications has propelled a vast array of research across the globe. While several different physical implementations of device level qubits are being investigated, semiconductor spin qubits have many similarities to scaled transistors. In this article, we discuss the device/integration of full 300mm based spin qubit devices. This includes the development of (i) a 28 Si epitaxial module ecosystem for growing isotopically pure substrates with among the best Hall mobility at these oxide thicknesses, (ii) a custom 300mm qubit testchip and integration/device line, and (iii) a novel dual nested gate integration process for creating quantum dots.

Please use this identifier to cite or link to this item:

http://hdl.handle.net/10453/133865