Qubit Device Integration Using Advanced Semiconductor Manufacturing Process Technology

Publication Type:
Conference Proceeding
Technical Digest - International Electron Devices Meeting, IEDM, 2019, 2018-December pp. 6.3.1 - 6.3.4
Issue Date:
Filename Description Size
08614624.pdfPublished version659.09 kB
Adobe PDF
Full metadata record
© 2018 IEEE. Quantum computing's value proposition of an exponential speedup in computing power for certain applications has propelled a vast array of research across the globe. While several different physical implementations of device level qubits are being investigated, semiconductor spin qubits have many similarities to scaled transistors. In this article, we discuss the device/integration of full 300mm based spin qubit devices. This includes the development of (i) a 28 Si epitaxial module ecosystem for growing isotopically pure substrates with among the best Hall mobility at these oxide thicknesses, (ii) a custom 300mm qubit testchip and integration/device line, and (iii) a novel dual nested gate integration process for creating quantum dots.
Please use this identifier to cite or link to this item: