Shape Engineering of InP Nanostructures by Selective Area Epitaxy

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Journal Article
ACS Nano, 2019
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© 2019 American Chemical Society. Greater demand for III-V nanostructures with more sophisticated geometries other than nanowires is expected because of the recent intensive investigation of nanowire networks that show great potential in all-optical logic gates, nanoelectronics, and quantum computing. Here, we demonstrate highly uniform arrays of InP nanostructures with tunable shapes, such as membrane-, prism-, and ring-like shapes, which can be simultaneously grown by selective area epitaxy. Our in-depth investigation of shape evolution confirms that the shape is essentially determined by pattern confinement and the minimization of total surface energy. After growth optimization, all of the different InP nanostructures grown under the same growth conditions show perfect wurtzite structure regardless of the geometry and strong and homogeneous photon emission. This work expands the research field in terms of producing nanostructures with the desired shapes beyond the limits of nanowires to satisfy various requirements for nanoelectronics, optoelectronics, and quantum device applications.
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