Direct measurement of quantum efficiency of single-photon emitters in hexagonal boron nitride

Nikolay, N; Mendelson, N; Özelci, E; Sontheimer, B; Böhm, F; Kewes, G; Toth, M; Aharonovich, I; Benson, O

Direct measurement of quantum efficiency of single-photon emitters in hexagonal boron nitride

Nikolay, N Mendelson, N Özelci, E Sontheimer, B Böhm, F Kewes, G Toth, M

Aharonovich, I

Benson, O

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Publication Type:: Journal Article
Citation:: Optica, 2019, 6 (8), pp. 1084 - 1088
Issue Date:: 2019-01-01

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Field	Value	Language
dc.contributor.author	Nikolay, N	en_US
dc.contributor.author	Mendelson, N	en_US
dc.contributor.author	Özelci, E	en_US
dc.contributor.author	Sontheimer, B	en_US
dc.contributor.author	Böhm, F	en_US
dc.contributor.author	Kewes, G	en_US
dc.contributor.author	Toth, M https://orcid.org/0000-0003-1564-4899	en_US
dc.contributor.author	Aharonovich, I https://orcid.org/0000-0003-4304-3935	en_US
dc.contributor.author	Benson, O	en_US
dc.date.issued	2019-01-01	en_US
dc.identifier.citation	Optica, 2019, 6 (8), pp. 1084 - 1088	en_US
dc.identifier.issn	2334-2536	en_US
dc.identifier.uri	http://hdl.handle.net/10453/136663
dc.description.abstract	© 2019 Optical Society of America. Single-photon emitters (SPEs) in two-dimensional materials are promising candidates for the future generation of quantum photonic technologies. In this work, we experimentally determine the quantum efficiency (QE) of SPEs in few-layer hexagonal boron nitride (h-BN). We employ a metal hemisphere that is attached to the tip of an atomic force microscope to directly measure the lifetime variation of the SPEs as the tip approaches the h-BN. This technique enables nondestructive, yet direct and absolute measurement of the QE of SPEs. We find that the emitters exhibit very high QEs approaching (87 ± 7)% at wavelengths of ≈580 nm, which is among the highest QEs recorded for a solid-state SPE.	en_US
dc.relation	http://purl.org/au-research/grants/arc/DP180100077
dc.relation	http://purl.org/au-research/grants/arc/DP190101058
dc.relation.ispartof	Optica	en_US
dc.relation.isbasedon	10.1364/OPTICA.6.001084	en_US
dc.rights	© 2019 Optical Society of America. Users may use, reuse, and build upon the article, or use the article for text or data mining, so long as such uses are for non-commercial purposes and appropriate attribution is maintained. All other rights are reserved.	en_US
dc.title	Direct measurement of quantum efficiency of single-photon emitters in hexagonal boron nitride	en_US
dc.type	Journal Article
utslib.citation.volume	8	en_US
utslib.citation.volume	6	en_US
utslib.for	0206 Quantum Physics	en_US
utslib.for	0205 Optical Physics	en_US
utslib.for	0906 Electrical and Electronic Engineering	en_US
utslib.for	1005 Communications Technologies	en_US
pubs.embargo.period	Not known	en_US
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Science
pubs.organisational-group	/University of Technology Sydney/Faculty of Science/School of Mathematical and Physical Sciences
pubs.organisational-group	/University of Technology Sydney/Strength - IBMD - Initiative for Biomedical Devices
pubs.organisational-group	/University of Technology Sydney/Strength - MTEE - Research Centre Materials and Technology for Energy Efficiency
pubs.organisational-group	/University of Technology Sydney/Students
utslib.copyright.status	closed_access
pubs.issue	8	en_US
pubs.publication-status	Published	en_US
pubs.volume	6	en_US

Abstract:

© 2019 Optical Society of America. Single-photon emitters (SPEs) in two-dimensional materials are promising candidates for the future generation of quantum photonic technologies. In this work, we experimentally determine the quantum efficiency (QE) of SPEs in few-layer hexagonal boron nitride (h-BN). We employ a metal hemisphere that is attached to the tip of an atomic force microscope to directly measure the lifetime variation of the SPEs as the tip approaches the h-BN. This technique enables nondestructive, yet direct and absolute measurement of the QE of SPEs. We find that the emitters exhibit very high QEs approaching (87 ± 7)% at wavelengths of ≈580 nm, which is among the highest QEs recorded for a solid-state SPE.

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http://hdl.handle.net/10453/136663