Purification of single-photon emission from hBN using post-processing treatments

Li, C; Xu, ZQ; Mendelson, N; Kianinia, M; Toth, M; Aharonovich, I

Purification of single-photon emission from hBN using post-processing treatments

Li, C Xu, ZQ

Mendelson, N Kianinia, M Toth, M

Aharonovich, I

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Publication Type:: Journal Article
Citation:: Nanophotonics, 2019
Issue Date:: 2019-01-01

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Field	Value	Language
dc.contributor.author	Li, C	en_US
dc.contributor.author	Xu, ZQ https://orcid.org/0000-0001-7291-1426	en_US
dc.contributor.author	Mendelson, N	en_US
dc.contributor.author	Kianinia, M	en_US
dc.contributor.author	Toth, M https://orcid.org/0000-0003-1564-4899	en_US
dc.contributor.author	Aharonovich, I https://orcid.org/0000-0003-4304-3935	en_US
dc.date.issued	2019-01-01	en_US
dc.identifier.citation	Nanophotonics, 2019	en_US
dc.identifier.uri	http://hdl.handle.net/10453/138289
dc.description.abstract	© 2019 Zai-Quan Xu, Igor Aharonovich et al., published by De Gruyter 2019. Single-photon emitters (SPEs) in hexagonal boron nitride (hBN) are promising components for on-chip quantum information processing. Recently, large-area hBN films prepared by chemical vapor deposition (CVD) were found to host uniform, high densities of SPEs. However, the purity of these emitters has, to date, been low, hindering their applications in practical devices. In this work, we present two methods for post-growth processing of hBN, which significantly improve SPEs in hBN films that had been transferred from substrates used for CVD. The emitters exhibit high photon purities in excess of 90% and narrow linewidths of ~3 nm at room temperature. Our work lays a foundation for producing high-quality emitters in an ultra-compact two-dimensional material system and paves the way for deployment of hBN SPEs in scalable on-chip photonic and quantum devices.	en_US
dc.relation	http://purl.org/au-research/grants/arc/DP180100077
dc.relation	http://purl.org/au-research/grants/arc/LP170100150
dc.relation	http://purl.org/au-research/grants/arc/DP190101058
dc.relation.ispartof	Nanophotonics	en_US
dc.relation.isbasedon	10.1515/nanoph-2019-0099	en_US
dc.title	Purification of single-photon emission from hBN using post-processing treatments	en_US
dc.type	Journal Article
utslib.for	0205 Optical Physics	en_US
utslib.for	1007 Nanotechnology	en_US
utslib.for	0906 Electrical and Electronic Engineering	en_US
pubs.embargo.period	Not known	en_US
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Science
pubs.organisational-group	/University of Technology Sydney/Faculty of Science/School of Mathematical and Physical Sciences
pubs.organisational-group	/University of Technology Sydney/Strength - MTEE - Research Centre Materials and Technology for Energy Efficiency
pubs.organisational-group	/University of Technology Sydney/Students
utslib.copyright.status	open_access
pubs.publication-status	Published	en_US

Abstract:

© 2019 Zai-Quan Xu, Igor Aharonovich et al., published by De Gruyter 2019. Single-photon emitters (SPEs) in hexagonal boron nitride (hBN) are promising components for on-chip quantum information processing. Recently, large-area hBN films prepared by chemical vapor deposition (CVD) were found to host uniform, high densities of SPEs. However, the purity of these emitters has, to date, been low, hindering their applications in practical devices. In this work, we present two methods for post-growth processing of hBN, which significantly improve SPEs in hBN films that had been transferred from substrates used for CVD. The emitters exhibit high photon purities in excess of 90% and narrow linewidths of ~3 nm at room temperature. Our work lays a foundation for producing high-quality emitters in an ultra-compact two-dimensional material system and paves the way for deployment of hBN SPEs in scalable on-chip photonic and quantum devices.

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http://hdl.handle.net/10453/138289