Dopants and Impurity-Induced Defects in ZnO

Rahman, MA; Phillips, M; Ton-That, C

Dopants and Impurity-Induced Defects in ZnO

Rahman, MA Phillips, M

Ton-That, C

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Publisher:: World Scientific
Publication Type:: Chapter
Citation:: Defects in Functional Materials, 2021, pp. 177-199
Issue Date:: 2021

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Field	Value	Language
dc.contributor.author	Rahman, MA
dc.contributor.author	Phillips, M https://orcid.org/0000-0003-1522-9281
dc.contributor.author	Ton-That, C https://orcid.org/0000-0003-3276-1739
dc.date.accessioned	2020-09-14T05:27:33Z
dc.date.available	2021-08-26T19:00:25Z
dc.date.issued	2021
dc.identifier.citation	Defects in Functional Materials, 2021, pp. 177-199
dc.identifier.isbn	9789811203169
dc.identifier.uri	http://hdl.handle.net/10453/142655
dc.description.abstract	In recent years, there has been resurgent interest in ZnO due to its efficient UV emission and potential application in opto-electronic devices. The problem of self-compensating defects, especially those related to acceptor-like dopants, remains a major challenge to date. In this chapter, we provide an overview of the fundamental properties of point defects and dopants as well as their complexes in bulk crystals and nanostructures. Nominally undoped ZnO is typically n-type, which has been widely ascribed to O vacancies or Zn interstitials; however, these defect assignments are controversial as O vacancies are deep donors while Zn interstitials are highly mobile at room temperature and considered to be unstable. Accordingly, H and group III impurities have also been suggested to be responsible for the observed n-type conductivity. Although there are still many unanswered questions concerning defect-related luminescence bands in ZnO, great progress has been made in recent years to identify and characterize them using spatially resolved luminescence spectroscopies and first-principles calculations. The ubiquitous green emission has several possible origins, including O and Zn vacancies as well as Cu impurities. The properties of group I (Li, Na, and Cu), group III (Ga, Al, and In), and group V (N, P, and Sb) impurities as well as their complexes with native point defects and H are discussed, along with a concluding outlook for future research into the optical properties of ZnO.
dc.format.extent	9
dc.language	en
dc.publisher	World Scientific
dc.relation.ispartof	Defects in Functional Materials
dc.relation.isbasedon	10.1142/9789811203176_0006
dc.rights	info:eu-repo/semantics/embargoedAccess
dc.title	Dopants and Impurity-Induced Defects in ZnO
dc.type	Chapter
pubs.organisational-group	/University of Technology Sydney/Faculty of Science
pubs.organisational-group	/University of Technology Sydney/Strength - CCET - Centre for Clean Energy Technology
pubs.organisational-group	/University of Technology Sydney/Faculty of Science/School of Mathematical and Physical Sciences
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Science/School of Life Sciences
utslib.copyright.status	open_access	*
pubs.consider-herdc	false
dc.date.updated	2020-09-14T05:27:18Z
pubs.place-of-publication	Singapore
pubs.publication-status	Published
dc.location	Singapore

Abstract:

In recent years, there has been resurgent interest in ZnO due to its efficient UV emission and potential application in opto-electronic devices. The problem of self-compensating defects, especially those related to acceptor-like dopants, remains a major challenge to date. In this chapter, we provide an overview of the fundamental properties of point defects and dopants as well as their complexes in bulk crystals and nanostructures. Nominally undoped ZnO is typically n-type, which has been widely ascribed to O vacancies or Zn interstitials; however, these defect assignments are controversial as O vacancies are deep donors while Zn interstitials are highly mobile at room temperature and considered to be unstable. Accordingly, H and group III impurities have also been suggested to be responsible for the observed n-type conductivity. Although there are still many unanswered questions concerning defect-related luminescence bands in ZnO, great progress has been made in recent years to identify and characterize them using spatially resolved luminescence spectroscopies and first-principles calculations. The ubiquitous green emission has several possible origins, including O and Zn vacancies as well as Cu impurities. The properties of group I (Li, Na, and Cu), group III (Ga, Al, and In), and group V (N, P, and Sb) impurities as well as their complexes with native point defects and H are discussed, along with a concluding outlook for future research into the optical properties of ZnO.

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http://hdl.handle.net/10453/142655