Erratum: Effects of high temperature annealing on defects and luminescence properties in H implanted ZnO (2014 J. Phys. D: Appl. Phys. 47 342001)

Publisher:
IOP PUBLISHING LTD
Publication Type:
Journal Article
Citation:
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2014, 47, (41)
Issue Date:
2014-10-15
Filename Description Size
Erratum JApplPhysD K Chan.docxSubmitted version13.72 kB
Unknown
Full metadata record
Please use this identifier to cite or link to this item: