Electrical and optical properties in O-polar and Zn-polar ZnO films grown by pulsed laser deposition

Luo, C; Rahman, MA; Phillips, MR; Ton-That, C; Butterling, M; Wagner, A; Ling, FCC

Electrical and optical properties in O-polar and Zn-polar ZnO films grown by pulsed laser deposition

Luo, C Rahman, MA Phillips, MR Ton-That, C

Butterling, M Wagner, A Ling, FCC

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Publisher:: Elsevier BV
Publication Type:: Journal Article
Citation:: Thin Solid Films, 2020, 711, pp. 138303-138303
Issue Date:: 2020-10-01

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Field	Value	Language
dc.contributor.author	Luo, C
dc.contributor.author	Rahman, MA
dc.contributor.author	Phillips, MR
dc.contributor.author	Ton-That, C https://orcid.org/0000-0003-3276-1739
dc.contributor.author	Butterling, M
dc.contributor.author	Wagner, A
dc.contributor.author	Ling, FCC
dc.date.accessioned	2020-10-07T10:34:03Z
dc.date.available	2020-10-07T10:34:03Z
dc.date.issued	2020-10-01
dc.identifier.citation	Thin Solid Films, 2020, 711, pp. 138303-138303
dc.identifier.issn	0040-6090
dc.identifier.uri	http://hdl.handle.net/10453/143129
dc.description.abstract	© 2020 Elsevier B.V. O-polar and Zn-polar ZnO films were grown on c-sapphire by pulsed laser deposition. Positron annihilation spectroscopy study reveals that the VZn-related defects in the ZnO films with different polarities are different in structure and their thermal evolution is different. Hall effect measurement and luminescence spectroscopy reveal that the electrical and optical properties and their corresponding thermal evolution are strongly dependent on the polarity of the film. The luminescence spectra of the as-grown Zn-polar ZnO film is signified by a negligible green defect emission (at ~ 2.4 eV) and strong near band edge emission as compared with the O-polar film. The as-grown Zn-polar film exhibited a lower electron concentration (2 × 1018 cm−3) than that of the O-polar film (6 × 1018 cm−3); this difference is attributed to their different H concentrations. For the O-polar film, the electron concentration decreased with annealing temperature Tanneal, reaching a minimum at 700°C and then increased to 4 × 1018 cm−3 at Tanneal = 900 °C. In comparison, the electron concentration of the Zn-polar ZnO film monotonically decreased with Tanneal attaining a value of ~1 × 1017 cm−3 at Tanneal = 900 °C, 40 times smaller than that of the O-polar film. The cause for the differences in the optical and electrical properties for the O-polar and Zn-polar films is explained by the presence of different defects in these films.
dc.language	en
dc.publisher	Elsevier BV
dc.relation.ispartof	Thin Solid Films
dc.relation.isbasedon	10.1016/j.tsf.2020.138303
dc.rights	info:eu-repo/semantics/openAccess
dc.subject	02 Physical Sciences, 09 Engineering, 10 Technology
dc.subject.classification	Applied Physics
dc.title	Electrical and optical properties in O-polar and Zn-polar ZnO films grown by pulsed laser deposition
dc.type	Journal Article
utslib.citation.volume	711
utslib.for	02 Physical Sciences
utslib.for	09 Engineering
utslib.for	10 Technology
pubs.organisational-group	/University of Technology Sydney/Faculty of Science
pubs.organisational-group	/University of Technology Sydney/Strength - CCET - Centre for Clean Energy Technology
pubs.organisational-group	/University of Technology Sydney/Faculty of Science/School of Mathematical and Physical Sciences
pubs.organisational-group	/University of Technology Sydney
utslib.copyright.status	open_access	*
dc.date.updated	2020-10-07T10:33:59Z
pubs.publication-status	Published
pubs.volume	711

Abstract:

© 2020 Elsevier B.V. O-polar and Zn-polar ZnO films were grown on c-sapphire by pulsed laser deposition. Positron annihilation spectroscopy study reveals that the VZn-related defects in the ZnO films with different polarities are different in structure and their thermal evolution is different. Hall effect measurement and luminescence spectroscopy reveal that the electrical and optical properties and their corresponding thermal evolution are strongly dependent on the polarity of the film. The luminescence spectra of the as-grown Zn-polar ZnO film is signified by a negligible green defect emission (at ~ 2.4 eV) and strong near band edge emission as compared with the O-polar film. The as-grown Zn-polar film exhibited a lower electron concentration (2 × 1018 cm−3) than that of the O-polar film (6 × 1018 cm−3); this difference is attributed to their different H concentrations. For the O-polar film, the electron concentration decreased with annealing temperature Tanneal, reaching a minimum at 700°C and then increased to 4 × 1018 cm−3 at Tanneal = 900 °C. In comparison, the electron concentration of the Zn-polar ZnO film monotonically decreased with Tanneal attaining a value of ~1 × 1017 cm−3 at Tanneal = 900 °C, 40 times smaller than that of the O-polar film. The cause for the differences in the optical and electrical properties for the O-polar and Zn-polar films is explained by the presence of different defects in these films.

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http://hdl.handle.net/10453/143129