Coherent Manipulation with Resonant Excitation and Single Emitter Creation of Nitrogen Vacancy Centers in 4H Silicon Carbide.

Mu, Z; Zargaleh, SA; von Bardeleben, HJ; Fröch, JE; Nonahal, M; Cai, H; Yang, X; Yang, J; Li, X; Aharonovich, I; Gao, W

Coherent Manipulation with Resonant Excitation and Single Emitter Creation of Nitrogen Vacancy Centers in 4H Silicon Carbide.

Mu, Z Zargaleh, SA von Bardeleben, HJ Fröch, JE Nonahal, M Cai, H Yang, X Yang, J Li, X Aharonovich, I

Gao, W

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Publisher:: AMER CHEMICAL SOC
Publication Type:: Journal Article
Citation:: Nano letters, 2020, 20, (8), pp. 6142-6147
Issue Date:: 2020-08

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Field	Value	Language
dc.contributor.author	Mu, Z
dc.contributor.author	Zargaleh, SA
dc.contributor.author	von Bardeleben, HJ
dc.contributor.author	Fröch, JE
dc.contributor.author	Nonahal, M
dc.contributor.author	Cai, H
dc.contributor.author	Yang, X
dc.contributor.author	Yang, J
dc.contributor.author	Li, X
dc.contributor.author	Aharonovich, I https://orcid.org/0000-0003-4304-3935
dc.contributor.author	Gao, W
dc.date.accessioned	2020-11-13T06:50:38Z
dc.date.available	2020-11-13T06:50:38Z
dc.date.issued	2020-08
dc.identifier.citation	Nano letters, 2020, 20, (8), pp. 6142-6147
dc.identifier.issn	1530-6992
dc.identifier.issn	1530-6992
dc.identifier.uri	http://hdl.handle.net/10453/143975
dc.description.abstract	Silicon carbide (SiC) has become a key player in the realization of scalable quantum technologies due to its ability to host optically addressable spin qubits and wafer-size samples. Here, we have demonstrated optically detected magnetic resonance (ODMR) with resonant excitation and clearly identified the ground state energy levels of the NV centers in 4H-SiC. Coherent manipulation of NV centers in SiC has been achieved with Rabi and Ramsey oscillations. Finally, we show the successful generation and characterization of single nitrogen vacancy (NV) center in SiC employing ion implantation. Our results highligh the key role of NV centers in SiC as a potential candidate for quantum information processing.
dc.format	Print-Electronic
dc.language	eng
dc.publisher	AMER CHEMICAL SOC
dc.relation	http://purl.org/au-research/grants/arc/DP180100077
dc.relation	http://purl.org/au-research/grants/arc/CE200100010
dc.relation.ispartof	Nano letters
dc.relation.isbasedon	10.1021/acs.nanolett.0c02342
dc.rights	info:eu-repo/semantics/restrictedAccess
dc.subject.classification	Nanoscience & Nanotechnology
dc.title	Coherent Manipulation with Resonant Excitation and Single Emitter Creation of Nitrogen Vacancy Centers in 4H Silicon Carbide.
dc.type	Journal Article
utslib.citation.volume	20
utslib.location.activity	United States
pubs.organisational-group	/University of Technology Sydney/Faculty of Science
pubs.organisational-group	/University of Technology Sydney/Faculty of Science/School of Mathematical and Physical Sciences
pubs.organisational-group	/University of Technology Sydney
utslib.copyright.status	closed_access	*
dc.date.updated	2020-11-13T06:50:34Z
pubs.issue	8
pubs.publication-status	Published
pubs.volume	20
utslib.citation.issue	8

Abstract:

Silicon carbide (SiC) has become a key player in the realization of scalable quantum technologies due to its ability to host optically addressable spin qubits and wafer-size samples. Here, we have demonstrated optically detected magnetic resonance (ODMR) with resonant excitation and clearly identified the ground state energy levels of the NV centers in 4H-SiC. Coherent manipulation of NV centers in SiC has been achieved with Rabi and Ramsey oscillations. Finally, we show the successful generation and characterization of single nitrogen vacancy (NV) center in SiC employing ion implantation. Our results highligh the key role of NV centers in SiC as a potential candidate for quantum information processing.

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http://hdl.handle.net/10453/143975