Controlled Doping of GeV and SnV Color Centers in Diamond Using Chemical Vapor Deposition.

Westerhausen, MT; Trycz, AT; Stewart, C; Nonahal, M; Regan, B; Kianinia, M; Aharonovich, I

Controlled Doping of GeV and SnV Color Centers in Diamond Using Chemical Vapor Deposition.

Westerhausen, MT Trycz, AT Stewart, C Nonahal, M Regan, B Kianinia, M

Aharonovich, I

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Publisher:: AMER CHEMICAL SOC
Publication Type:: Journal Article
Citation:: ACS applied materials & interfaces, 2020, 12, (26), pp. 29700-29705
Issue Date:: 2020-07

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Field	Value	Language
dc.contributor.author	Westerhausen, MT
dc.contributor.author	Trycz, AT
dc.contributor.author	Stewart, C
dc.contributor.author	Nonahal, M
dc.contributor.author	Regan, B
dc.contributor.author	Kianinia, M https://orcid.org/0000-0003-4073-1492
dc.contributor.author	Aharonovich, I https://orcid.org/0000-0003-4304-3935
dc.date.accessioned	2020-11-15T06:45:56Z
dc.date.available	2020-11-15T06:45:56Z
dc.date.issued	2020-07
dc.identifier.citation	ACS applied materials & interfaces, 2020, 12, (26), pp. 29700-29705
dc.identifier.issn	1944-8244
dc.identifier.issn	1944-8252
dc.identifier.uri	http://hdl.handle.net/10453/144022
dc.description.abstract	Group IV color centers in diamond (Si, Ge, Sn, and Pb) have recently emerged as promising candidates for realization of scalable quantum photonics. However, their synthesis in nanoscale diamond is still in its infancy. In this work we demonstrate controlled synthesis of selected group IV defects (Ge and Sn) into nanodiamonds and nanoscale single crystal diamond membranes by microwave plasma chemical vapor deposition. We take advantage of inorganic salts to prepare the chemical precursors that contain the required ions that are then incorporated into the growing diamond. Photoluminescence measurements confirm that the selected group IV emitters are present in the diamond without degrading its structural quality. Our results are important to expand the versatile synthesis of color centers in diamond.
dc.format	Print-Electronic
dc.language	eng
dc.publisher	AMER CHEMICAL SOC
dc.relation	http://purl.org/au-research/grants/arc/DP180100077
dc.relation.ispartof	ACS applied materials & interfaces
dc.relation.isbasedon	10.1021/acsami.0c07242
dc.rights	info:eu-repo/semantics/restrictedAccess
dc.subject	03 Chemical Sciences, 09 Engineering
dc.subject.classification	Nanoscience & Nanotechnology
dc.title	Controlled Doping of GeV and SnV Color Centers in Diamond Using Chemical Vapor Deposition.
dc.type	Journal Article
utslib.citation.volume	12
utslib.location.activity	United States
utslib.for	03 Chemical Sciences
utslib.for	09 Engineering
pubs.organisational-group	/University of Technology Sydney/Faculty of Science
pubs.organisational-group	/University of Technology Sydney/Faculty of Science/School of Mathematical and Physical Sciences
pubs.organisational-group	/University of Technology Sydney
utslib.copyright.status	closed_access	*
dc.date.updated	2020-11-15T06:45:45Z
pubs.issue	26
pubs.publication-status	Published
pubs.volume	12
utslib.citation.issue	26

Abstract:

Group IV color centers in diamond (Si, Ge, Sn, and Pb) have recently emerged as promising candidates for realization of scalable quantum photonics. However, their synthesis in nanoscale diamond is still in its infancy. In this work we demonstrate controlled synthesis of selected group IV defects (Ge and Sn) into nanodiamonds and nanoscale single crystal diamond membranes by microwave plasma chemical vapor deposition. We take advantage of inorganic salts to prepare the chemical precursors that contain the required ions that are then incorporated into the growing diamond. Photoluminescence measurements confirm that the selected group IV emitters are present in the diamond without degrading its structural quality. Our results are important to expand the versatile synthesis of color centers in diamond.

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http://hdl.handle.net/10453/144022