Determination of the Dipole Orientation of Single Defects in Hexagonal Boron Nitride

Takashima, H; Maruya, H; Ishihara, K; Tashima, T; Shimazaki, K; Schell, AW; Tran, TT; Aharonovich, I; Takeuchi, S

Determination of the Dipole Orientation of Single Defects in Hexagonal Boron Nitride

Takashima, H Maruya, H Ishihara, K Tashima, T Shimazaki, K Schell, AW Tran, TT Aharonovich, I

Takeuchi, S

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Publisher:: AMER CHEMICAL SOC
Publication Type:: Journal Article
Citation:: ACS Photonics, 2020, 7, (8), pp. 2056-2063
Issue Date:: 2020-08-19

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Field	Value	Language
dc.contributor.author	Takashima, H
dc.contributor.author	Maruya, H
dc.contributor.author	Ishihara, K
dc.contributor.author	Tashima, T
dc.contributor.author	Shimazaki, K
dc.contributor.author	Schell, AW
dc.contributor.author	Tran, TT
dc.contributor.author	Aharonovich, I https://orcid.org/0000-0003-4304-3935
dc.contributor.author	Takeuchi, S
dc.date.accessioned	2020-11-19T02:47:13Z
dc.date.available	2020-11-19T02:47:13Z
dc.date.issued	2020-08-19
dc.identifier.citation	ACS Photonics, 2020, 7, (8), pp. 2056-2063
dc.identifier.issn	2330-4022
dc.identifier.issn	2330-4022
dc.identifier.uri	http://hdl.handle.net/10453/144142
dc.description.abstract	© 2020 American Chemical Society. Dipole orientation in solid-state single photon emitters plays an important role in applications such as quantum information devices integrated with nanophotonic components. In various single photon emitters, hexagonal boron nitride (hBN) with point defects is one of the most promising candidates as a single photon emitter for high photostability, ultrahigh brightness, nonlinearity, and narrow emission line width. In applying hBN with a single point defect to those applications, three-dimensional determination of its dipole orientation is critically important. In this paper, we three-dimensionally determine the dipole orientation of single defects in hBN nanoflakes. By measuring the second-order correlation function and emission spectra, hBN nanoflakes with single defects were found from hBN nanoflakes placed on microscope coverslips. High-resolution emission intensity patterns were measured by exciting the defects in the hBNs with a focused radially polarized beam and azimuthally polarized beam. By comparing these patterns with theoretical calculations, we determined the polar angle and azimuthal angle of the dipole moment and found that they were oriented near the plane of the layers of the hBN nanoflakes on the microscope coverslip on which they were placed. This information is important to realize highly efficient quantum information devices in which the dipole orientation has to be precisely controlled.
dc.language	English
dc.publisher	AMER CHEMICAL SOC
dc.relation	http://purl.org/au-research/grants/arc/DP180100077
dc.relation.ispartof	ACS Photonics
dc.relation.isbasedon	10.1021/acsphotonics.0c00405
dc.rights	info:eu-repo/semantics/restrictedAccess
dc.subject	0205 Optical Physics, 0206 Quantum Physics, 0906 Electrical and Electronic Engineering
dc.title	Determination of the Dipole Orientation of Single Defects in Hexagonal Boron Nitride
dc.type	Journal Article
utslib.citation.volume	7
utslib.for	0205 Optical Physics
utslib.for	0206 Quantum Physics
utslib.for	0906 Electrical and Electronic Engineering
pubs.organisational-group	/University of Technology Sydney/Faculty of Science
pubs.organisational-group	/University of Technology Sydney/Faculty of Science/School of Mathematical and Physical Sciences
pubs.organisational-group	/University of Technology Sydney
utslib.copyright.status	closed_access	*
pubs.consider-herdc	false
dc.date.updated	2020-11-19T02:47:04Z
pubs.issue	8
pubs.publication-status	Published
pubs.volume	7
utslib.citation.issue	8

Abstract:

© 2020 American Chemical Society. Dipole orientation in solid-state single photon emitters plays an important role in applications such as quantum information devices integrated with nanophotonic components. In various single photon emitters, hexagonal boron nitride (hBN) with point defects is one of the most promising candidates as a single photon emitter for high photostability, ultrahigh brightness, nonlinearity, and narrow emission line width. In applying hBN with a single point defect to those applications, three-dimensional determination of its dipole orientation is critically important. In this paper, we three-dimensionally determine the dipole orientation of single defects in hBN nanoflakes. By measuring the second-order correlation function and emission spectra, hBN nanoflakes with single defects were found from hBN nanoflakes placed on microscope coverslips. High-resolution emission intensity patterns were measured by exciting the defects in the hBNs with a focused radially polarized beam and azimuthally polarized beam. By comparing these patterns with theoretical calculations, we determined the polar angle and azimuthal angle of the dipole moment and found that they were oriented near the plane of the layers of the hBN nanoflakes on the microscope coverslip on which they were placed. This information is important to realize highly efficient quantum information devices in which the dipole orientation has to be precisely controlled.

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http://hdl.handle.net/10453/144142