Electrical excitation and charge-state conversion of silicon vacancy color centers in single-crystal diamond membranes

Bray, K; Fedyanin, DY; Khramtsov, IA; Bilokur, MO; Regan, B; Toth, M; Aharonovich, I

Electrical excitation and charge-state conversion of silicon vacancy color centers in single-crystal diamond membranes

Bray, K Fedyanin, DY Khramtsov, IA Bilokur, MO Regan, B Toth, M

Aharonovich, I

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Publisher:: AMER INST PHYSICS
Publication Type:: Journal Article
Citation:: Applied Physics Letters, 2020, 116, (10)
Issue Date:: 2020-03-09

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Field	Value	Language
dc.contributor.author	Bray, K
dc.contributor.author	Fedyanin, DY
dc.contributor.author	Khramtsov, IA
dc.contributor.author	Bilokur, MO
dc.contributor.author	Regan, B
dc.contributor.author	Toth, M https://orcid.org/0000-0003-1564-4899
dc.contributor.author	Aharonovich, I https://orcid.org/0000-0003-4304-3935
dc.date.accessioned	2020-11-20T04:22:26Z
dc.date.available	2020-11-20T04:22:26Z
dc.date.issued	2020-03-09
dc.identifier.citation	Applied Physics Letters, 2020, 116, (10)
dc.identifier.issn	0003-6951
dc.identifier.issn	1077-3118
dc.identifier.uri	http://hdl.handle.net/10453/144187
dc.description.abstract	© 2020 Author(s). The silicon-vacancy (SiV) color center in diamond has recently emerged as a promising qubit for quantum photonics. However, the electrical control and excitation of the SiV centers are challenging due to the low density of free carriers in doped diamond. Here, we realize electrical excitation of SiV centers in a single-crystal diamond membrane, which is promising for scalable photonic architectures. We further demonstrate electrical switching of the charge states of the SiV centers by applying a forward bias voltage to the fabricated diamond-membrane devices and identify the position of the SiV-/SiV0 charge transition level. Our findings provide a perspective toward electrical triggering of color centers in diamond and accelerate the development of scalable quantum nanophotonic technologies.
dc.language	English
dc.publisher	AMER INST PHYSICS
dc.relation	http://purl.org/au-research/grants/arc/DP180100077
dc.relation	http://purl.org/au-research/grants/arc/DP190101058
dc.relation.ispartof	Applied Physics Letters
dc.relation.isbasedon	10.1063/1.5139256
dc.rights	info:eu-repo/semantics/restrictedAccess
dc.subject	02 Physical Sciences, 09 Engineering, 10 Technology
dc.subject.classification	Applied Physics
dc.title	Electrical excitation and charge-state conversion of silicon vacancy color centers in single-crystal diamond membranes
dc.type	Journal Article
utslib.citation.volume	116
utslib.for	02 Physical Sciences
utslib.for	09 Engineering
utslib.for	10 Technology
pubs.organisational-group	/University of Technology Sydney/Faculty of Science
pubs.organisational-group	/University of Technology Sydney/Faculty of Science/School of Mathematical and Physical Sciences
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Students
pubs.organisational-group	/University of Technology Sydney/Strength - MTEE - Research Centre Materials and Technology for Energy Efficiency
utslib.copyright.status	closed_access	*
pubs.consider-herdc	false
dc.date.updated	2020-11-20T04:22:11Z
pubs.issue	10
pubs.publication-status	Published
pubs.volume	116
utslib.citation.issue	10

Abstract:

© 2020 Author(s). The silicon-vacancy (SiV) color center in diamond has recently emerged as a promising qubit for quantum photonics. However, the electrical control and excitation of the SiV centers are challenging due to the low density of free carriers in doped diamond. Here, we realize electrical excitation of SiV centers in a single-crystal diamond membrane, which is promising for scalable photonic architectures. We further demonstrate electrical switching of the charge states of the SiV centers by applying a forward bias voltage to the fabricated diamond-membrane devices and identify the position of the SiV-/SiV0 charge transition level. Our findings provide a perspective toward electrical triggering of color centers in diamond and accelerate the development of scalable quantum nanophotonic technologies.

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http://hdl.handle.net/10453/144187