Generation of Spin Defects in Hexagonal Boron Nitride

Publisher:
AMER CHEMICAL SOC
Publication Type:
Journal Article
Citation:
ACS Photonics, 2020, 7, (8), pp. 2147-2152
Issue Date:
2020-08-19
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© 2020 American Chemical Society. Two-dimensional hexagonal boron nitride offers intriguing opportunities for advanced studies of light-matter interaction at the nanoscale, specifically for realizations in quantum nanophotonics. Here, we demonstrate the generation of optically addressable spin defects based on the negatively charged boron vacancy (VB-) center. We show that these centers can be created in exfoliated hexagonal boron nitride using a variety of focused ion beams (nitrogen, xenon, and argon). Using a combination of laser and resonant microwave excitation, we carry out optically detected magnetic resonance spectroscopy measurements, which reveal a zero-field ground state splitting for the defect of ∼3.46 GHz. We also perform photoluminescence excitation spectroscopy and temperature-dependent photoluminescence measurements to elucidate the photophysical properties of the VB- centers. Our results are important for advanced quantum and nanophotonics realizations involving manipulation and readout of spin defects in hexagonal boron nitride.
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