Highly uniform InGaAs/InP quantum well nanowire array-based light emitting diodes

Yang, I; Kim, S; Niihori, M; Alabadla, A; Li, Z; Li, L; Lockrey, MN; Choi, DY; Aharonovich, I; Wong-Leung, J; Tan, HH; Jagadish, C; Fu, L

Highly uniform InGaAs/InP quantum well nanowire array-based light emitting diodes

Yang, I Kim, S

Niihori, M Alabadla, A Li, Z Li, L Lockrey, MN Choi, DY Aharonovich, I

Wong-Leung, J Tan, HH Jagadish, C Fu, L

Permalink

Publisher:: ELSEVIER
Publication Type:: Journal Article
Citation:: Nano Energy, 2020, 71
Issue Date:: 2020-05-01

Closed Access

	Filename	Description	Size
	1-s2.0-S2211285520301348-main.pdf	Published version	2.42 MB	Adobe PDF	View/Open

Copyright Clearance Process

Recently Added
In Progress
Closed Access

This item is closed access and not available.

Full metadata record

Field	Value	Language
dc.contributor.author	Yang, I
dc.contributor.author	Kim, S https://orcid.org/0000-0001-9836-3608
dc.contributor.author	Niihori, M
dc.contributor.author	Alabadla, A
dc.contributor.author	Li, Z
dc.contributor.author	Li, L
dc.contributor.author	Lockrey, MN
dc.contributor.author	Choi, DY
dc.contributor.author	Aharonovich, I https://orcid.org/0000-0003-4304-3935
dc.contributor.author	Wong-Leung, J
dc.contributor.author	Tan, HH
dc.contributor.author	Jagadish, C
dc.contributor.author	Fu, L
dc.date.accessioned	2020-12-15T04:01:02Z
dc.date.available	2020-12-15T04:01:02Z
dc.date.issued	2020-05-01
dc.identifier.citation	Nano Energy, 2020, 71
dc.identifier.issn	2211-2855
dc.identifier.issn	2211-3282
dc.identifier.uri	http://hdl.handle.net/10453/144709
dc.description.abstract	© 2020 Elsevier Ltd III-V semiconductor nanowire infrared light emitting diodes (LEDs) have great potential for the development of Si-based integrated photonics. In this paper, we report the growth of highly uniform triangular prism InGaAs/InP single quantum well (QW) nanowires using a 2-step growth by metal organic chemical vapour deposition by selective area epitaxy technique. Based on these nanowire arrays, we demonstrate nanowire array LEDs with strong electroluminescence at two main peaks, originating from the axial and radial QW respectively and control the relative emission of those two peaks. We further reveal that a long lateral contact of the nanowire LED results in more intense radial QW emission by shortening the current path to the radial quantum well. Our study provides an important foundation for the development of high-performance array nanowire-based devices such as high-power multi-wavelength LEDs, high power electrically switchable wavelength-selectors and QW infrared photodetectors.
dc.language	English
dc.publisher	ELSEVIER
dc.relation.ispartof	Nano Energy
dc.relation.isbasedon	10.1016/j.nanoen.2020.104576
dc.rights	info:eu-repo/semantics/restrictedAccess
dc.subject	0303 Macromolecular and Materials Chemistry, 0912 Materials Engineering, 1007 Nanotechnology
dc.title	Highly uniform InGaAs/InP quantum well nanowire array-based light emitting diodes
dc.type	Journal Article
utslib.citation.volume	71
utslib.for	0303 Macromolecular and Materials Chemistry
utslib.for	0912 Materials Engineering
utslib.for	1007 Nanotechnology
pubs.organisational-group	/University of Technology Sydney/Faculty of Science
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Science/School of Mathematical and Physical Sciences
utslib.copyright.status	closed_access	*
pubs.consider-herdc	false
dc.date.updated	2020-12-15T04:00:57Z
pubs.publication-status	Published
pubs.volume	71

Abstract:

© 2020 Elsevier Ltd III-V semiconductor nanowire infrared light emitting diodes (LEDs) have great potential for the development of Si-based integrated photonics. In this paper, we report the growth of highly uniform triangular prism InGaAs/InP single quantum well (QW) nanowires using a 2-step growth by metal organic chemical vapour deposition by selective area epitaxy technique. Based on these nanowire arrays, we demonstrate nanowire array LEDs with strong electroluminescence at two main peaks, originating from the axial and radial QW respectively and control the relative emission of those two peaks. We further reveal that a long lateral contact of the nanowire LED results in more intense radial QW emission by shortening the current path to the radial quantum well. Our study provides an important foundation for the development of high-performance array nanowire-based devices such as high-power multi-wavelength LEDs, high power electrically switchable wavelength-selectors and QW infrared photodetectors.

Please use this identifier to cite or link to this item:

http://hdl.handle.net/10453/144709