Resonant energy transfer between hexagonal boron nitride quantum emitters and atomically layered transition metal dichalcogenides

Li C; Xu ZQ; Mendelson N; Kianinia M; Wan Y; Toth M; Aharonovich I; Bradac C

Resonant energy transfer between hexagonal boron nitride quantum emitters and atomically layered transition metal dichalcogenides

Li C Xu ZQ Mendelson N Kianinia M Wan Y Toth M Aharonovich I Bradac C

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Publisher:: IOP PUBLISHING LTD
Publication Type:: Journal Article
Citation:: 2D Materials, 2020, 7, (4)
Issue Date:: 2020-10-01

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Field	Value	Language
dc.contributor.author	Li C
dc.contributor.author	Xu ZQ
dc.contributor.author	Mendelson N
dc.contributor.author	Kianinia M
dc.contributor.author	Wan Y
dc.contributor.author	Toth M
dc.contributor.author	Aharonovich I
dc.contributor.author	Bradac C
dc.date.accessioned	2021-01-14T04:58:49Z
dc.date.available	2021-01-14T04:58:49Z
dc.date.issued	2020-10-01
dc.identifier.citation	2D Materials, 2020, 7, (4)
dc.identifier.issn	2053-1583
dc.identifier.issn	2053-1583
dc.identifier.uri	http://hdl.handle.net/10453/145431
dc.description.abstract	© 2020 IOP Publishing Ltd. Van der Waals heterostructures offer a unique platform to investigate light matter interaction at the nanoscale. In this work, we explore resonant energy transfer processes between van der Waals materials from two fundamentally different systems: single-photon emitters in two-dimensional hexagonal boron nitride and excitons in transition metal dichalcogenide monolayers. We study the photodynamics between these two systems by performing time-resolved fluorescence spectroscopy. Our results show that colour centres in hexagonal boron nitride do interact with transition metal dichalcogenide excitons and provide important insights into harnessing these interactions in van der Waals heterostructures for advanced nanophotonic devices.
dc.language	English
dc.publisher	IOP PUBLISHING LTD
dc.relation	http://purl.org/au-research/grants/arc/DP180100077
dc.relation	http://purl.org/au-research/grants/arc/DE180100810
dc.relation	http://purl.org/au-research/grants/arc/DP190101058
dc.relation	DAAD Germany
dc.relation	University of Technology Sydney
dc.relation.ispartof	2D Materials
dc.relation.isbasedon	10.1088/2053-1583/aba332
dc.rights	info:eu-repo/semantics/restrictedAccess
dc.subject	0303 Macromolecular and Materials Chemistry, 0912 Materials Engineering, 1007 Nanotechnology
dc.title	Resonant energy transfer between hexagonal boron nitride quantum emitters and atomically layered transition metal dichalcogenides
dc.type	Journal Article
utslib.citation.volume	7
utslib.for	0303 Macromolecular and Materials Chemistry
utslib.for	0912 Materials Engineering
utslib.for	1007 Nanotechnology
pubs.organisational-group	/University of Technology Sydney/Faculty of Science
pubs.organisational-group	/University of Technology Sydney/Faculty of Science/School of Mathematical and Physical Sciences
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Strength - MTEE - Research Centre Materials and Technology for Energy Efficiency
utslib.copyright.status	closed_access	*
pubs.consider-herdc	false
dc.date.updated	2021-01-14T04:58:39Z
pubs.issue	4
pubs.publication-status	Published
pubs.volume	7
utslib.opus.status	recently_added	*
utslib.citation.issue	4

Abstract:

© 2020 IOP Publishing Ltd. Van der Waals heterostructures offer a unique platform to investigate light matter interaction at the nanoscale. In this work, we explore resonant energy transfer processes between van der Waals materials from two fundamentally different systems: single-photon emitters in two-dimensional hexagonal boron nitride and excitons in transition metal dichalcogenide monolayers. We study the photodynamics between these two systems by performing time-resolved fluorescence spectroscopy. Our results show that colour centres in hexagonal boron nitride do interact with transition metal dichalcogenide excitons and provide important insights into harnessing these interactions in van der Waals heterostructures for advanced nanophotonic devices.

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http://hdl.handle.net/10453/145431