Engineering and Localization of Quantum Emitters in Large Hexagonal Boron Nitride Layers.

Choi, S; Tran, TT; Elbadawi, C; Lobo, C; Wang, X; Juodkazis, S; Seniutinas, G; Toth, M; Aharonovich, I

Engineering and Localization of Quantum Emitters in Large Hexagonal Boron Nitride Layers.

Choi, S Tran, TT Elbadawi, C Lobo, C

Wang, X Juodkazis, S Seniutinas, G Toth, M

Aharonovich, I

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Publisher:: AMER CHEMICAL SOC
Publication Type:: Journal Article
Citation:: ACS Applied Materials & Interfaces, 2016, 8, (43), pp. 29642-29648
Issue Date:: 2016-10-20

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Field	Value	Language
dc.contributor.author	Choi, S
dc.contributor.author	Tran, TT
dc.contributor.author	Elbadawi, C
dc.contributor.author	Lobo, C https://orcid.org/0000-0002-2746-1363
dc.contributor.author	Wang, X
dc.contributor.author	Juodkazis, S
dc.contributor.author	Seniutinas, G
dc.contributor.author	Toth, M https://orcid.org/0000-0003-1564-4899
dc.contributor.author	Aharonovich, I https://orcid.org/0000-0003-4304-3935
dc.date.accessioned	2021-05-14T03:39:04Z
dc.date.available	2021-05-14T03:39:04Z
dc.date.issued	2016-10-20
dc.identifier.citation	ACS Applied Materials & Interfaces, 2016, 8, (43), pp. 29642-29648
dc.identifier.issn	1944-8244
dc.identifier.issn	1944-8252
dc.identifier.uri	http://hdl.handle.net/10453/148902
dc.description.abstract	Hexagonal boron nitride is a wide-band-gap van der Waals material that has recently emerged as a promising platform for quantum photonics experiments. In this work, we study the formation and localization of narrowband quantum emitters in large flakes (up to tens of micrometers wide) of hexagonal boron nitride. The emitters can be activated in as-grown hexagonal boron nitride by electron irradiation or high-temperature annealing, and the emitter formation probability can be increased by ion implantation or focused laser irradiation of the as-grown material. Interestingly, we show that the emitters are always localized at the edges of the flakes, unlike most luminescent point defects in three-dimensional materials. Our results constitute an important step on the roadmap of deploying hexagonal boron nitride in nanophotonics applications.
dc.format	Print-Electronic
dc.language	eng
dc.publisher	AMER CHEMICAL SOC
dc.relation	http://purl.org/au-research/grants/arc/DE130100592
dc.relation	http://purl.org/au-research/grants/arc/DP140102721
dc.relation	http://purl.org/au-research/grants/arc/IH150100028
dc.relation.ispartof	ACS Applied Materials & Interfaces
dc.relation.isbasedon	10.1021/acsami.6b09875
dc.rights	info:eu-repo/semantics/openAccess
dc.subject	03 Chemical Sciences, 09 Engineering
dc.subject.classification	Nanoscience & Nanotechnology
dc.title	Engineering and Localization of Quantum Emitters in Large Hexagonal Boron Nitride Layers.
dc.type	Journal Article
utslib.citation.volume	8
utslib.location.activity	United States
utslib.for	0303 Macromolecular and Materials Chemistry
utslib.for	0306 Physical Chemistry (incl. Structural)
utslib.for	0904 Chemical Engineering
utslib.for	03 Chemical Sciences
utslib.for	09 Engineering
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Science
pubs.organisational-group	/University of Technology Sydney/Strength - MTEE - Research Centre Materials and Technology for Energy Efficiency
pubs.organisational-group	/University of Technology Sydney/Students
pubs.organisational-group	/University of Technology Sydney/Faculty of Science/School of Mathematical and Physical Sciences
utslib.copyright.status	open_access	*
dc.date.updated	2021-05-14T03:39:02Z
pubs.issue	43
pubs.publication-status	Published
pubs.volume	8
utslib.citation.issue	43

Abstract:

Hexagonal boron nitride is a wide-band-gap van der Waals material that has recently emerged as a promising platform for quantum photonics experiments. In this work, we study the formation and localization of narrowband quantum emitters in large flakes (up to tens of micrometers wide) of hexagonal boron nitride. The emitters can be activated in as-grown hexagonal boron nitride by electron irradiation or high-temperature annealing, and the emitter formation probability can be increased by ion implantation or focused laser irradiation of the as-grown material. Interestingly, we show that the emitters are always localized at the edges of the flakes, unlike most luminescent point defects in three-dimensional materials. Our results constitute an important step on the roadmap of deploying hexagonal boron nitride in nanophotonics applications.

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http://hdl.handle.net/10453/148902