Direct Growth of Hexagonal Boron Nitride on Photonic Chips for High-Throughput Characterization

Glushkov, E; Mendelson, N; Chernev, A; Ritika, R; Lihter, M; Zamani, RR; Comtet, J; Navikas, V; Aharonovich, I; Radenovic, A

Direct Growth of Hexagonal Boron Nitride on Photonic Chips for High-Throughput Characterization

Glushkov, E Mendelson, N Chernev, A Ritika, R Lihter, M Zamani, RR Comtet, J Navikas, V Aharonovich, I

Radenovic, A

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Publisher:: American Chemical Society
Publication Type:: Journal Article
Citation:: ACS Photonics, 2021, 8, (7), pp. 2033-2040
Issue Date:: 2021-07-21

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Field	Value	Language
dc.contributor.author	Glushkov, E
dc.contributor.author	Mendelson, N
dc.contributor.author	Chernev, A
dc.contributor.author	Ritika, R
dc.contributor.author	Lihter, M
dc.contributor.author	Zamani, RR
dc.contributor.author	Comtet, J
dc.contributor.author	Navikas, V
dc.contributor.author	Aharonovich, I https://orcid.org/0000-0003-4304-3935
dc.contributor.author	Radenovic, A
dc.date.accessioned	2022-01-17T02:32:00Z
dc.date.available	2022-01-17T02:32:00Z
dc.date.issued	2021-07-21
dc.identifier.citation	ACS Photonics, 2021, 8, (7), pp. 2033-2040
dc.identifier.issn	2330-4022
dc.identifier.issn	2330-4022
dc.identifier.uri	http://hdl.handle.net/10453/153198
dc.description.abstract	Adapting optical microscopy methods for nanoscale characterization of defects in two-dimensional (2D) materials is a vital step for photonic on-chip devices. To increase the analysis throughput, waveguide-based on-chip imaging platforms have been recently developed. Their inherent disadvantage, however, is the necessity to transfer the 2D material from the growth substrate to the imaging chip, which introduces nonuniform material coverage and contamination, potentially altering the characterization results. Here we present a unique approach to circumvent these shortfalls by directly growing a widely used 2D material (hexagonal boron nitride, hBN) on silicon nitride chips and optically characterizing the defects in the intact as-grown material. We compare the direct growth approach to the standard PMMA-assisted wet transfer method and confirm the clear advantages of the direct growth. While demonstrated with hBN in the current work, the method can be extended to other 2D materials.
dc.language	English
dc.publisher	American Chemical Society
dc.relation	http://purl.org/au-research/grants/arc/CE200100010
dc.relation.ispartof	ACS Photonics
dc.relation.isbasedon	10.1021/acsphotonics.1c00165
dc.rights	info:eu-repo/semantics/closedAccess
dc.subject	0205 Optical Physics, 0206 Quantum Physics, 0906 Electrical and Electronic Engineering
dc.title	Direct Growth of Hexagonal Boron Nitride on Photonic Chips for High-Throughput Characterization
dc.type	Journal Article
utslib.citation.volume	8
utslib.for	0205 Optical Physics
utslib.for	0206 Quantum Physics
utslib.for	0906 Electrical and Electronic Engineering
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Science
pubs.organisational-group	/University of Technology Sydney/Faculty of Science/School of Mathematical and Physical Sciences
utslib.copyright.status	closed_access	*
pubs.consider-herdc	false
dc.date.updated	2022-01-17T02:31:56Z
pubs.issue	7
pubs.publication-status	Published
pubs.volume	8
utslib.citation.issue	7

Abstract:

Adapting optical microscopy methods for nanoscale characterization of defects in two-dimensional (2D) materials is a vital step for photonic on-chip devices. To increase the analysis throughput, waveguide-based on-chip imaging platforms have been recently developed. Their inherent disadvantage, however, is the necessity to transfer the 2D material from the growth substrate to the imaging chip, which introduces nonuniform material coverage and contamination, potentially altering the characterization results. Here we present a unique approach to circumvent these shortfalls by directly growing a widely used 2D material (hexagonal boron nitride, hBN) on silicon nitride chips and optically characterizing the defects in the intact as-grown material. We compare the direct growth approach to the standard PMMA-assisted wet transfer method and confirm the clear advantages of the direct growth. While demonstrated with hBN in the current work, the method can be extended to other 2D materials.

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http://hdl.handle.net/10453/153198