Phonon dephasing and spectral diffusion of quantum emitters in hexagonal boron nitride

White, S; Stewart, C; Solntsev, AS; Li, C; Toth, M; Kianinia, M; Aharonovich, I

Phonon dephasing and spectral diffusion of quantum emitters in hexagonal boron nitride

White, S Stewart, C Solntsev, AS Li, C Toth, M

Kianinia, M

Aharonovich, I

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Publisher:: The Optical Society
Publication Type:: Journal Article
Citation:: Optica, 2021, 8, (9), pp. 1153-1158
Issue Date:: 2021-09-01

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Field	Value	Language
dc.contributor.author	White, S
dc.contributor.author	Stewart, C
dc.contributor.author	Solntsev, AS
dc.contributor.author	Li, C
dc.contributor.author	Toth, M https://orcid.org/0000-0003-1564-4899
dc.contributor.author	Kianinia, M https://orcid.org/0000-0003-4073-1492
dc.contributor.author	Aharonovich, I https://orcid.org/0000-0003-4304-3935
dc.date.accessioned	2022-01-17T03:55:44Z
dc.date.available	2022-01-17T03:55:44Z
dc.date.issued	2021-09-01
dc.identifier.citation	Optica, 2021, 8, (9), pp. 1153-1158
dc.identifier.issn	2334-2536
dc.identifier.issn	2334-2536
dc.identifier.uri	http://hdl.handle.net/10453/153209
dc.description.abstract	Quantum emitters in hexagonal boron nitride (hBN) are emerging as bright and robust sources of single photons for applications in quantum optics. In this work we present detailed studies on the limiting factors to achieve Fourier transform limited spectral lines. Specifically, we study phonon dephasing and spectral diffusion of quantum emitters in hBN via resonant excitation spectroscopy at cryogenic temperatures. We show that the linewidths of hBN quantum emitters are phonon broadened, even at 5 K, with typical values of the order of ∼1 GHz. While spectral diffusion dominates at increasing pump powers, it can be minimized by working well below saturation excitation power. Our results are important for future utilization of quantum emitters in hBN for quantum interference experiments.
dc.language	en
dc.publisher	The Optical Society
dc.relation	http://purl.org/au-research/grants/arc/DP190101058
dc.relation	http://purl.org/au-research/grants/arc/CE200100010
dc.relation.ispartof	Optica
dc.relation.isbasedon	10.1364/OPTICA.431262
dc.rights	info:eu-repo/semantics/openAccess
dc.subject	0205 Optical Physics, 0906 Electrical and Electronic Engineering, 1005 Communications Technologies
dc.title	Phonon dephasing and spectral diffusion of quantum emitters in hexagonal boron nitride
dc.type	Journal Article
utslib.citation.volume	8
utslib.for	0205 Optical Physics
utslib.for	0906 Electrical and Electronic Engineering
utslib.for	1005 Communications Technologies
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Science
pubs.organisational-group	/University of Technology Sydney/Strength - MTEE - Research Centre Materials and Technology for Energy Efficiency
pubs.organisational-group	/University of Technology Sydney/Faculty of Science/School of Mathematical and Physical Sciences
utslib.copyright.status	open_access	*
pubs.consider-herdc	false
dc.date.updated	2022-01-17T03:55:41Z
pubs.issue	9
pubs.publication-status	Published
pubs.volume	8
utslib.citation.issue	9

Abstract:

Quantum emitters in hexagonal boron nitride (hBN) are emerging as bright and robust sources of single photons for applications in quantum optics. In this work we present detailed studies on the limiting factors to achieve Fourier transform limited spectral lines. Specifically, we study phonon dephasing and spectral diffusion of quantum emitters in hBN via resonant excitation spectroscopy at cryogenic temperatures. We show that the linewidths of hBN quantum emitters are phonon broadened, even at 5 K, with typical values of the order of ∼1 GHz. While spectral diffusion dominates at increasing pump powers, it can be minimized by working well below saturation excitation power. Our results are important for future utilization of quantum emitters in hBN for quantum interference experiments.

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http://hdl.handle.net/10453/153209