Recoil Implantation Using Gas-Phase Precursor Molecules

Gale, A; Froech, J; Kianinia, M; Bishop, J; Aharonovich, I; Toth, M

Recoil Implantation Using Gas-Phase Precursor Molecules

Gale, A Froech, J Kianinia, M

Bishop, J

Aharonovich, I

Toth, M

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Publisher:: Royal Society of Chemistry
Publication Type:: Journal Article
Citation:: Nanoscale, 2021, 13, (20), pp. 9322-9327
Issue Date:: 2021-01-01

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Field	Value	Language
dc.contributor.author	Gale, A
dc.contributor.author	Froech, J
dc.contributor.author	Kianinia, M https://orcid.org/0000-0003-4073-1492
dc.contributor.author	Bishop, J https://orcid.org/0000-0001-6895-7544
dc.contributor.author	Aharonovich, I https://orcid.org/0000-0003-4304-3935
dc.contributor.author	Toth, M https://orcid.org/0000-0003-1564-4899
dc.date.accessioned	2022-01-17T04:17:00Z
dc.date.available	2022-01-17T04:17:00Z
dc.date.issued	2021-01-01
dc.identifier.citation	Nanoscale, 2021, 13, (20), pp. 9322-9327
dc.identifier.issn	2040-3364
dc.identifier.issn	2040-3372
dc.identifier.uri	http://hdl.handle.net/10453/153213
dc.description.abstract	Ion implantation underpins a vast range of devices and technologies that require precise control over the physical, chemical, electronic, magnetic and optical properties of materials. A variant termed “recoil implantation” – in which a precursor is deposited onto a substrate as a thin film and implanted via momentum transfer from incident energetic ions – has a number of compelling advantages, particularly when performed using an inert ion nano-beam [Fröch et al., Nat. Commun., 2020, 11, 5039]. However, a major drawback of this approach is that the implant species are limited to the constituents of solid thin films. Here we overcome this limitation by demonstrating recoil implantation using gas-phase precursors. Specifically, we fabricate nitrogen-vacancy (NV) color centers in diamond using an Ar+ ion beam and the nitrogen-containing precursor gases N2, NH3 and NF3. Our work expands the applicability of recoil implantation with the potential to be suitable to a larger portion of the periodic table, and to applications in which thin film deposition/removal is impractical.
dc.format	Print
dc.language	eng
dc.publisher	Royal Society of Chemistry
dc.relation	http://purl.org/au-research/grants/arc/LP170100150
dc.relation	http://purl.org/au-research/grants/arc/DP190101058
dc.relation	http://purl.org/au-research/grants/arc/CE200100010
dc.relation.ispartof	Nanoscale
dc.relation.isbasedon	10.1039/d1nr00850a
dc.rights	info:eu-repo/semantics/openAccess
dc.subject	02 Physical Sciences, 03 Chemical Sciences, 10 Technology
dc.subject.classification	Nanoscience & Nanotechnology
dc.title	Recoil Implantation Using Gas-Phase Precursor Molecules
dc.type	Journal Article
utslib.citation.volume	13
utslib.location.activity	England
utslib.for	02 Physical Sciences
utslib.for	03 Chemical Sciences
utslib.for	10 Technology
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Science
pubs.organisational-group	/University of Technology Sydney/Strength - MTEE - Research Centre Materials and Technology for Energy Efficiency
pubs.organisational-group	/University of Technology Sydney/Faculty of Science/School of Mathematical and Physical Sciences
utslib.copyright.status	open_access	*
pubs.consider-herdc	false
dc.date.updated	2022-01-17T04:16:58Z
pubs.issue	20
pubs.publication-status	Published
pubs.volume	13
utslib.citation.issue	20

Abstract:

Ion implantation underpins a vast range of devices and technologies that require precise control over the physical, chemical, electronic, magnetic and optical properties of materials. A variant termed “recoil implantation” – in which a precursor is deposited onto a substrate as a thin film and implanted via momentum transfer from incident energetic ions – has a number of compelling advantages, particularly when performed using an inert ion nano-beam [Fröch et al., Nat. Commun., 2020, 11, 5039]. However, a major drawback of this approach is that the implant species are limited to the constituents of solid thin films. Here we overcome this limitation by demonstrating recoil implantation using gas-phase precursors. Specifically, we fabricate nitrogen-vacancy (NV) color centers in diamond using an Ar+ ion beam and the nitrogen-containing precursor gases N2, NH3 and NF3. Our work expands the applicability of recoil implantation with the potential to be suitable to a larger portion of the periodic table, and to applications in which thin film deposition/removal is impractical.

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http://hdl.handle.net/10453/153213