Room temperature coherent control of spin defects in hexagonal boron nitride

Gottscholl, A; Diez, M; Soltamov, V; Kasper, C; Sperlich, A; Kianinia, M; Bradac, C; Aharonovich, I; Dyakonov, V

Room temperature coherent control of spin defects in hexagonal boron nitride

Gottscholl, A Diez, M Soltamov, V Kasper, C Sperlich, A Kianinia, M

Bradac, C

Aharonovich, I

Dyakonov, V

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Publisher:: American Association for the Advancement of Science
Publication Type:: Journal Article
Citation:: Science Advances, 2021, 7, (14), pp. 1-6
Issue Date:: 2021-04-02

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Field	Value	Language
dc.contributor.author	Gottscholl, A
dc.contributor.author	Diez, M
dc.contributor.author	Soltamov, V
dc.contributor.author	Kasper, C
dc.contributor.author	Sperlich, A
dc.contributor.author	Kianinia, M https://orcid.org/0000-0003-4073-1492
dc.contributor.author	Bradac, C https://orcid.org/0000-0002-6673-7238
dc.contributor.author	Aharonovich, I https://orcid.org/0000-0003-4304-3935
dc.contributor.author	Dyakonov, V
dc.date.accessioned	2022-01-18T00:49:28Z
dc.date.available	2021-02-12
dc.date.available	2022-01-18T00:49:28Z
dc.date.issued	2021-04-02
dc.identifier.citation	Science Advances, 2021, 7, (14), pp. 1-6
dc.identifier.issn	2375-2548
dc.identifier.issn	2375-2548
dc.identifier.uri	http://hdl.handle.net/10453/153243
dc.description.abstract	Optically active spin defects are promising candidates for solid-state quantum information and sensing applications. To use these defects in quantum applications coherent manipulation of their spin state is required. Here, we realize coherent control of ensembles of boron vacancy centers in hexagonal boron nitride (hBN). Specifically, by applying pulsed spin resonance protocols, we measure a spin-lattice relaxation time of 18 microseconds and a spin coherence time of 2 microseconds at room temperature. The spin-lattice relaxation time increases by three orders of magnitude at cryogenic temperature. By applying a method to decouple the spin state from its inhomogeneous nuclear environment the optically detected magnetic resonance linewidth is substantially reduced to several tens of kilohertz. Our results are important for the employment of van der Waals materials for quantum technologies, specifically in the context of high resolution quantum sensing of two-dimensional heterostructures, nanoscale devices, and emerging atomically thin magnets.
dc.format	Electronic-Print
dc.language	eng
dc.publisher	American Association for the Advancement of Science
dc.relation.ispartof	Science Advances
dc.relation.isbasedon	10.1126/sciadv.abf3630
dc.rights	info:eu-repo/semantics/openAccess
dc.title	Room temperature coherent control of spin defects in hexagonal boron nitride
dc.type	Journal Article
utslib.citation.volume	7
utslib.location.activity	United States
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Science
pubs.organisational-group	/University of Technology Sydney/Faculty of Science/School of Mathematical and Physical Sciences
utslib.copyright.status	open_access	*
pubs.consider-herdc	false
dc.date.updated	2022-01-18T00:49:27Z
pubs.issue	14
pubs.publication-status	Published
pubs.volume	7
utslib.citation.issue	14

Abstract:

Optically active spin defects are promising candidates for solid-state quantum information and sensing applications. To use these defects in quantum applications coherent manipulation of their spin state is required. Here, we realize coherent control of ensembles of boron vacancy centers in hexagonal boron nitride (hBN). Specifically, by applying pulsed spin resonance protocols, we measure a spin-lattice relaxation time of 18 microseconds and a spin coherence time of 2 microseconds at room temperature. The spin-lattice relaxation time increases by three orders of magnitude at cryogenic temperature. By applying a method to decouple the spin state from its inhomogeneous nuclear environment the optically detected magnetic resonance linewidth is substantially reduced to several tens of kilohertz. Our results are important for the employment of van der Waals materials for quantum technologies, specifically in the context of high resolution quantum sensing of two-dimensional heterostructures, nanoscale devices, and emerging atomically thin magnets.

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http://hdl.handle.net/10453/153243