Influence of Temperature on Photodetection Properties of Honeycomb-like GaN Nanostructures

Jain, SK; Low, MX; Vashishtha, P; Nirantar, S; Zhu, L; Ton-That, C; Ahmed, T; Sriram, S; Walia, S; Gupta, G; Bhaskaran, M

Influence of Temperature on Photodetection Properties of Honeycomb-like GaN Nanostructures

Jain, SK Low, MX Vashishtha, P Nirantar, S Zhu, L Ton-That, C

Ahmed, T Sriram, S Walia, S Gupta, G Bhaskaran, M

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Publisher:: WILEY
Publication Type:: Journal Article
Citation:: Advanced Materials Interfaces, 2021, 8, (14)
Issue Date:: 2021-07-01

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Field	Value	Language
dc.contributor.author	Jain, SK
dc.contributor.author	Low, MX
dc.contributor.author	Vashishtha, P
dc.contributor.author	Nirantar, S
dc.contributor.author	Zhu, L
dc.contributor.author	Ton-That, C https://orcid.org/0000-0003-3276-1739
dc.contributor.author	Ahmed, T
dc.contributor.author	Sriram, S
dc.contributor.author	Walia, S
dc.contributor.author	Gupta, G
dc.contributor.author	Bhaskaran, M
dc.date.accessioned	2022-02-08T04:29:56Z
dc.date.available	2022-02-08T04:29:56Z
dc.date.issued	2021-07-01
dc.identifier.citation	Advanced Materials Interfaces, 2021, 8, (14)
dc.identifier.issn	2196-7350
dc.identifier.issn	2196-7350
dc.identifier.uri	http://hdl.handle.net/10453/154280
dc.description.abstract	Broadband photodetectors operable under harsh temperature conditions are crucial optoelectronic components to support ongoing and futuristic technological advancement. Conventional photodetectors are limited to room temperature operation due to the thermal instability of semiconductors under harsh conditions and incapable of covering the ultraviolet (UV) spectrum due to narrow bandgap properties. Gallium nitride (GaN) is a wide bandgap and thermally stable semiconductor, ideal for addressing the abovementioned limitations. Here, epitaxial honeycomb nanostructured GaN film is grown via a plasma-assisted molecular beam epitaxy system and deployed for stable broadband photodetectors, which can be operated from −75 to 250 °C. Further, spectral response is investigated for a broad spectrum from UV (280 nm) to near-infrared (850 nm) region. It displays a peak responsivity at 365 nm associated to the bandgap energy of GaN. Fabricated photodetectors with honeycomb-like nanostructures drive peak responsivity and external quantum efficiency of 2.41 × 106 AW−1 and 8.18 × 108%, respectively, when illuminated at a power density of 1 mWcm−2 and 365 nm wavelength source under 1 V bias. Temperature-correlated spectral response presents a quenching of responsivity at higher temperatures in visible spectrum associated with the thermal quenching of defect states. The thermally stable and efficient broadband photodetector based on honeycomb-like nanostructured GaN is promising for the combustion industry, arctic science, and space explorations.
dc.language	English
dc.publisher	WILEY
dc.relation.ispartof	Advanced Materials Interfaces
dc.relation.isbasedon	10.1002/admi.202100593
dc.rights	info:eu-repo/semantics/closedAccess
dc.subject	0306 Physical Chemistry (incl. Structural), 0912 Materials Engineering
dc.title	Influence of Temperature on Photodetection Properties of Honeycomb-like GaN Nanostructures
dc.type	Journal Article
utslib.citation.volume	8
utslib.for	0306 Physical Chemistry (incl. Structural)
utslib.for	0912 Materials Engineering
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Science
pubs.organisational-group	/University of Technology Sydney/Faculty of Science/School of Mathematical and Physical Sciences
utslib.copyright.status	closed_access	*
dc.date.updated	2022-02-08T04:29:55Z
pubs.issue	14
pubs.publication-status	Published
pubs.volume	8
utslib.citation.issue	14

Abstract:

Broadband photodetectors operable under harsh temperature conditions are crucial optoelectronic components to support ongoing and futuristic technological advancement. Conventional photodetectors are limited to room temperature operation due to the thermal instability of semiconductors under harsh conditions and incapable of covering the ultraviolet (UV) spectrum due to narrow bandgap properties. Gallium nitride (GaN) is a wide bandgap and thermally stable semiconductor, ideal for addressing the abovementioned limitations. Here, epitaxial honeycomb nanostructured GaN film is grown via a plasma-assisted molecular beam epitaxy system and deployed for stable broadband photodetectors, which can be operated from −75 to 250 °C. Further, spectral response is investigated for a broad spectrum from UV (280 nm) to near-infrared (850 nm) region. It displays a peak responsivity at 365 nm associated to the bandgap energy of GaN. Fabricated photodetectors with honeycomb-like nanostructures drive peak responsivity and external quantum efficiency of 2.41 × 106 AW−1 and 8.18 × 108%, respectively, when illuminated at a power density of 1 mWcm−2 and 365 nm wavelength source under 1 V bias. Temperature-correlated spectral response presents a quenching of responsivity at higher temperatures in visible spectrum associated with the thermal quenching of defect states. The thermally stable and efficient broadband photodetector based on honeycomb-like nanostructured GaN is promising for the combustion industry, arctic science, and space explorations.

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http://hdl.handle.net/10453/154280