Qubits made by advanced semiconductor manufacturing

Zwerver, AMJ; Krähenmann, T; Watson, TF; Lampert, L; George, HC; Pillarisetty, R; Bojarski, SA; Amin, P; Amitonov, SV; Boter, JM; Caudillo, R; Corras-Serrano, D; Dehollain, JP; Droulers, G; Henry, EM; Kotlyar, R; Lodari, M; Lüthi, F; Michalak, DJ; Mueller, BK; Neyens, S; Roberts, J; Samkharadze, N; Zheng, G; Zietz, OK; Scappucci, G; Veldhorst, M; Vandersypen, LMK; Clarke, JS

Qubits made by advanced semiconductor manufacturing

Zwerver, AMJ Krähenmann, T Watson, TF Lampert, L George, HC Pillarisetty, R Bojarski, SA Amin, P Amitonov, SV Boter, JM Caudillo, R Corras-Serrano, D Dehollain, JP Droulers, G Henry, EM Kotlyar, R Lodari, M Lüthi, F Michalak, DJ Mueller, BK Neyens, S Roberts, J Samkharadze, N Zheng, G Zietz, OK Scappucci, G Veldhorst, M Vandersypen, LMK Clarke, JS

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Publisher:: Springer Science and Business Media LLC
Publication Type:: Journal Article
Citation:: Nature Electronics, 2022, 5, (3), pp. 184-190
Issue Date:: 2022-03

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Field	Value	Language
dc.contributor.author	Zwerver, AMJ
dc.contributor.author	Krähenmann, T
dc.contributor.author	Watson, TF
dc.contributor.author	Lampert, L
dc.contributor.author	George, HC
dc.contributor.author	Pillarisetty, R
dc.contributor.author	Bojarski, SA
dc.contributor.author	Amin, P
dc.contributor.author	Amitonov, SV
dc.contributor.author	Boter, JM
dc.contributor.author	Caudillo, R
dc.contributor.author	Corras-Serrano, D
dc.contributor.author	Dehollain, JP
dc.contributor.author	Droulers, G
dc.contributor.author	Henry, EM
dc.contributor.author	Kotlyar, R
dc.contributor.author	Lodari, M
dc.contributor.author	Lüthi, F
dc.contributor.author	Michalak, DJ
dc.contributor.author	Mueller, BK
dc.contributor.author	Neyens, S
dc.contributor.author	Roberts, J
dc.contributor.author	Samkharadze, N
dc.contributor.author	Zheng, G
dc.contributor.author	Zietz, OK
dc.contributor.author	Scappucci, G
dc.contributor.author	Veldhorst, M
dc.contributor.author	Vandersypen, LMK
dc.contributor.author	Clarke, JS
dc.date.accessioned	2022-03-30T23:23:02Z
dc.date.available	2022-03-30T23:23:02Z
dc.date.issued	2022-03
dc.identifier.citation	Nature Electronics, 2022, 5, (3), pp. 184-190
dc.identifier.issn	2520-1131
dc.identifier.uri	http://hdl.handle.net/10453/155732
dc.description.abstract	<jats:title>Abstract</jats:title><jats:p>Full-scale quantum computers require the integration of millions of qubits, and the potential of using industrial semiconductor manufacturing to meet this need has driven the development of quantum computing in silicon quantum dots. However, fabrication has so far relied on electron-beam lithography and, with a few exceptions, conventional lift-off processes that suffer from low yield and poor uniformity. Here we report quantum dots that are hosted at a <jats:sup>28</jats:sup>Si/<jats:sup>28</jats:sup>SiO<jats:sub>2</jats:sub> interface and fabricated in a 300 mm semiconductor manufacturing facility using all-optical lithography and fully industrial processing. With this approach, we achieve nanoscale gate patterns with excellent yield. In the multi-electron regime, the quantum dots allow good tunnel barrier control—a crucial feature for fault-tolerant two-qubit gates. Single-spin qubit operation using magnetic resonance in the few-electron regime reveals relaxation times of over 1 s at 1 T and coherence times of over 3 ms.</jats:p>
dc.language	en
dc.publisher	Springer Science and Business Media LLC
dc.relation.ispartof	Nature Electronics
dc.relation.isbasedon	10.1038/s41928-022-00727-9
dc.rights	info:eu-repo/semantics/restrictedAccess
dc.rights	This is a post-peer-review, pre-copyedit version of an article published in [Nature Electronics, 2022, 5, (3), pp. 184-190 Published: 29 March 2022]. The final authenticated version is available online at: [ https://www.nature.com/articles/s41928-022-00727-9]”
dc.title	Qubits made by advanced semiconductor manufacturing
dc.type	Journal Article
utslib.citation.volume	5
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Science
pubs.organisational-group	/University of Technology Sydney/Faculty of Science/School of Mathematical and Physical Sciences
pubs.organisational-group	/University of Technology Sydney/Strength - QSI - Centre for Quantum Software and Information
utslib.copyright.status	recently_added	*
dc.date.updated	2022-03-30T23:23:00Z
pubs.issue	3
pubs.publication-status	Published
pubs.volume	5
utslib.citation.issue	3

Abstract:

AbstractFull-scale quantum computers require the integration of millions of qubits, and the potential of using industrial semiconductor manufacturing to meet this need has driven the development of quantum computing in silicon quantum dots. However, fabrication has so far relied on electron-beam lithography and, with a few exceptions, conventional lift-off processes that suffer from low yield and poor uniformity. Here we report quantum dots that are hosted at a 28Si/28SiO2 interface and fabricated in a 300 mm semiconductor manufacturing facility using all-optical lithography and fully industrial processing. With this approach, we achieve nanoscale gate patterns with excellent yield. In the multi-electron regime, the quantum dots allow good tunnel barrier control—a crucial feature for fault-tolerant two-qubit gates. Single-spin qubit operation using magnetic resonance in the few-electron regime reveals relaxation times of over 1 s at 1 T and coherence times of over 3 ms.

Please use this identifier to cite or link to this item:

http://hdl.handle.net/10453/155732