Effect of NH<inf>3</inf>-flow modulation on the morphological properties of nonpolar a-plane AlGaN epilayers

Nasir, A; Zhang, X; Zakria, M; Zhang, J; Hu, G; Cui, Y

Effect of NH<inf>3</inf>-flow modulation on the morphological properties of nonpolar a-plane AlGaN epilayers

Nasir, A Zhang, X Zakria, M Zhang, J Hu, G Cui, Y

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Publisher:: Elsevier BV
Publication Type:: Journal Article
Citation:: Superlattices and Microstructures, 2021, 159, pp. 107045
Issue Date:: 2021-11-01

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Field	Value	Language
dc.contributor.author	Nasir, A
dc.contributor.author	Zhang, X
dc.contributor.author	Zakria, M
dc.contributor.author	Zhang, J
dc.contributor.author	Hu, G
dc.contributor.author	Cui, Y
dc.date.accessioned	2022-06-01T05:24:38Z
dc.date.available	2022-06-01T05:24:38Z
dc.date.issued	2021-11-01
dc.identifier.citation	Superlattices and Microstructures, 2021, 159, pp. 107045
dc.identifier.issn	0749-6036
dc.identifier.issn	1096-3677
dc.identifier.uri	http://hdl.handle.net/10453/157864
dc.description.abstract	In this article, the effect of ammonia (NH3) flow-modulation on the crystalline quality and morphology of the nonpolar a-plane AlGaN epilayer grown on the r-plane sapphire substrate was reported. The as-grown metal-organic chemical vapor deposition (MOCVD) epilayers have been diagnosed with high-resolution X-ray diffraction, atomic force microscopy, and scanning electron microscopy techniques. It was found that with the introduction of proper interruption of NH3-flow during the MOCVD growth process, enormous reduction in the threading dislocation density (TDD) and significant improvements in the crystalline quality and surface morphology could be realized. By optimizing the NH3-flow interruption time to 30 s during the growth of the nonpolar AlGaN intermediate layer, a small root-mean-square value of 1.8 nm for the surface roughness and a TDD of 2 × 1010 cm−2 were achieved. Moreover, the full width at half maximum values determined from the X-ray rocking curves were reduced from 2410 to 1512 arcsec and 2355 to 1645 arcsec along c- and m-plane directions, respectively.
dc.language	en
dc.publisher	Elsevier BV
dc.relation.ispartof	Superlattices and Microstructures
dc.relation.isbasedon	10.1016/j.spmi.2021.107045
dc.rights	info:eu-repo/semantics/closedAccess
dc.subject	0204 Condensed Matter Physics, 0205 Optical Physics, 0206 Quantum Physics
dc.subject.classification	Applied Physics
dc.title	Effect of NH<inf>3</inf>-flow modulation on the morphological properties of nonpolar a-plane AlGaN epilayers
dc.type	Journal Article
utslib.citation.volume	159
utslib.for	0204 Condensed Matter Physics
utslib.for	0205 Optical Physics
utslib.for	0206 Quantum Physics
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Science
pubs.organisational-group	/University of Technology Sydney/Faculty of Science/School of Mathematical and Physical Sciences
utslib.copyright.status	closed_access	*
dc.date.updated	2022-06-01T05:24:36Z
pubs.publication-status	Published
pubs.volume	159

Abstract:

In this article, the effect of ammonia (NH3) flow-modulation on the crystalline quality and morphology of the nonpolar a-plane AlGaN epilayer grown on the r-plane sapphire substrate was reported. The as-grown metal-organic chemical vapor deposition (MOCVD) epilayers have been diagnosed with high-resolution X-ray diffraction, atomic force microscopy, and scanning electron microscopy techniques. It was found that with the introduction of proper interruption of NH3-flow during the MOCVD growth process, enormous reduction in the threading dislocation density (TDD) and significant improvements in the crystalline quality and surface morphology could be realized. By optimizing the NH3-flow interruption time to 30 s during the growth of the nonpolar AlGaN intermediate layer, a small root-mean-square value of 1.8 nm for the surface roughness and a TDD of 2 × 1010 cm−2 were achieved. Moreover, the full width at half maximum values determined from the X-ray rocking curves were reduced from 2410 to 1512 arcsec and 2355 to 1645 arcsec along c- and m-plane directions, respectively.

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http://hdl.handle.net/10453/157864