Switching Hole and Electron Transports of Molecules on Metal Oxides by Energy Level Alignment Tuning.

Bao, Z-M; Xu, R-P; Li, C; Xie, Z-Z; Zhao, X-D; Zhang, Y-B; Li, Y-Q; Tang, J-X

Switching Hole and Electron Transports of Molecules on Metal Oxides by Energy Level Alignment Tuning.

Bao, Z-M Xu, R-P Li, C

Xie, Z-Z Zhao, X-D Zhang, Y-B Li, Y-Q Tang, J-X

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Publisher:: AMER CHEMICAL SOC
Publication Type:: Journal Article
Citation:: ACS Appl Mater Interfaces, 2016, 8, (34), pp. 22410-22417
Issue Date:: 2016-08-31

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Field	Value	Language
dc.contributor.author	Bao, Z-M
dc.contributor.author	Xu, R-P
dc.contributor.author	Li, C https://orcid.org/0000-0002-8424-9721
dc.contributor.author	Xie, Z-Z
dc.contributor.author	Zhao, X-D
dc.contributor.author	Zhang, Y-B
dc.contributor.author	Li, Y-Q
dc.contributor.author	Tang, J-X
dc.date.accessioned	2022-08-13T07:22:21Z
dc.date.available	2022-08-13T07:22:21Z
dc.date.issued	2016-08-31
dc.identifier.citation	ACS Appl Mater Interfaces, 2016, 8, (34), pp. 22410-22417
dc.identifier.issn	1944-8244
dc.identifier.issn	1944-8252
dc.identifier.uri	http://hdl.handle.net/10453/160073
dc.description.abstract	Charge transport at organic/inorganic hybrid contacts significantly affects the performance of organic optoelectronic devices because the unfavorable energy level offsets at these interfaces can hinder charge injection or extraction due to large barrier heights. Herein, we report a technologically relevant method to functionalize a traditional hole-transport layer of solution-processed nickel oxide (NiOx) with various interlayers. The photoemission spectroscopy measurements reveal the continuous tuning of the NiOx substrate work function ranging from 2.5 to 6.6 eV, enabling the alignment transition of energy levels between the Schottky-Mott limit and Fermi level pinning at the organic/composite NiOx interface. As a result, switching hole and electron transport for the active organic material on the composite NiOx layer is achieved due to the controlled carrier injection/extraction barriers. The experimental findings indicate that tuning the work function of metal oxides with optimum energy level offsets can facilitate the charge transport at organic/electrode contacts.
dc.format	Print-Electronic
dc.language	eng
dc.publisher	AMER CHEMICAL SOC
dc.relation.ispartof	ACS Appl Mater Interfaces
dc.relation.isbasedon	10.1021/acsami.6b06999
dc.rights	info:eu-repo/semantics/closedAccess
dc.subject	03 Chemical Sciences, 09 Engineering
dc.subject.classification	Nanoscience & Nanotechnology
dc.title	Switching Hole and Electron Transports of Molecules on Metal Oxides by Energy Level Alignment Tuning.
dc.type	Journal Article
utslib.citation.volume	8
utslib.location.activity	United States
utslib.for	03 Chemical Sciences
utslib.for	09 Engineering
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Science
pubs.organisational-group	/University of Technology Sydney/Faculty of Science/School of Mathematical and Physical Sciences
utslib.copyright.status	closed_access	*
dc.date.updated	2022-08-13T07:22:18Z
pubs.issue	34
pubs.publication-status	Published
pubs.volume	8
utslib.citation.issue	34

Abstract:

Charge transport at organic/inorganic hybrid contacts significantly affects the performance of organic optoelectronic devices because the unfavorable energy level offsets at these interfaces can hinder charge injection or extraction due to large barrier heights. Herein, we report a technologically relevant method to functionalize a traditional hole-transport layer of solution-processed nickel oxide (NiOx) with various interlayers. The photoemission spectroscopy measurements reveal the continuous tuning of the NiOx substrate work function ranging from 2.5 to 6.6 eV, enabling the alignment transition of energy levels between the Schottky-Mott limit and Fermi level pinning at the organic/composite NiOx interface. As a result, switching hole and electron transport for the active organic material on the composite NiOx layer is achieved due to the controlled carrier injection/extraction barriers. The experimental findings indicate that tuning the work function of metal oxides with optimum energy level offsets can facilitate the charge transport at organic/electrode contacts.

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http://hdl.handle.net/10453/160073