Growth and optical properties of In<inf>x</inf>Ga<inf>1−x</inf>P nanowires synthesized by selective-area epitaxy

Berg, A; Caroff, P; Shahid, N; Lockrey, MN; Yuan, X; Borgström, MT; Tan, HH; Jagadish, C

Growth and optical properties of In<inf>x</inf>Ga<inf>1−x</inf>P nanowires synthesized by selective-area epitaxy

Berg, A Caroff, P Shahid, N Lockrey, MN Yuan, X Borgström, MT Tan, HH Jagadish, C

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Publisher:: Springer
Publication Type:: Journal Article
Citation:: Nano Research, 2017, 10, (2), pp. 672-682
Issue Date:: 2017-02-01

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Field	Value	Language
dc.contributor.author	Berg, A
dc.contributor.author	Caroff, P
dc.contributor.author	Shahid, N
dc.contributor.author	Lockrey, MN
dc.contributor.author	Yuan, X
dc.contributor.author	Borgström, MT
dc.contributor.author	Tan, HH
dc.contributor.author	Jagadish, C
dc.date.accessioned	2022-09-12T05:41:56Z
dc.date.available	2022-09-12T05:41:56Z
dc.date.issued	2017-02-01
dc.identifier.citation	Nano Research, 2017, 10, (2), pp. 672-682
dc.identifier.issn	1998-0000
dc.identifier.issn	1998-0000
dc.identifier.uri	http://hdl.handle.net/10453/161764
dc.description.abstract	Ternary III–V nanowires (NWs) cover a wide range of wavelengths in the solar spectrum and would greatly benefit from being synthesized as position-controlled arrays for improved vertical yield, reproducibility, and tunable optical absorption. Here, we report on successful selective-area epitaxy of metal-particle-free vertical InxGa1−xP NW arrays using metal–organic vapor phase epitaxy and detail their optical properties. A systematic growth study establishes the range of suitable growth parameters to obtain uniform NW growth over a large array. The optical properties of the NWs were characterized by room-temperature cathodoluminescence spectroscopy. Tunability of the emission wavelength from 870 nm to approximately 800 nm was achieved. Transmission electron microscopy and energy dispersive X-ray measurements performed on cross-section samples revealed a pure wurtzite crystal structure with very few stacking faults and a slight composition gradient along the NW growth axis. [Figure not available: see fulltext.]
dc.language	English
dc.publisher	Springer
dc.relation.ispartof	Nano Research
dc.relation.isbasedon	10.1007/s12274-016-1325-1
dc.rights	info:eu-repo/semantics/closedAccess
dc.subject.classification	Nanoscience & Nanotechnology
dc.title	Growth and optical properties of In<inf>x</inf>Ga<inf>1−x</inf>P nanowires synthesized by selective-area epitaxy
dc.type	Journal Article
utslib.citation.volume	10
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Science
utslib.copyright.status	closed_access	*
pubs.consider-herdc	false
dc.date.updated	2022-09-12T05:41:55Z
pubs.issue	2
pubs.publication-status	Published
pubs.volume	10
utslib.citation.issue	2

Abstract:

Ternary III–V nanowires (NWs) cover a wide range of wavelengths in the solar spectrum and would greatly benefit from being synthesized as position-controlled arrays for improved vertical yield, reproducibility, and tunable optical absorption. Here, we report on successful selective-area epitaxy of metal-particle-free vertical InxGa1−xP NW arrays using metal–organic vapor phase epitaxy and detail their optical properties. A systematic growth study establishes the range of suitable growth parameters to obtain uniform NW growth over a large array. The optical properties of the NWs were characterized by room-temperature cathodoluminescence spectroscopy. Tunability of the emission wavelength from 870 nm to approximately 800 nm was achieved. Transmission electron microscopy and energy dispersive X-ray measurements performed on cross-section samples revealed a pure wurtzite crystal structure with very few stacking faults and a slight composition gradient along the NW growth axis. [Figure not available: see fulltext.]

Please use this identifier to cite or link to this item:

http://hdl.handle.net/10453/161764