Formation of nanocrystalline GeSn thin film on Si substrate by sputtering and rapid thermal annealing

Mahmodi, H; Hashim, MR; Hashim, U

Formation of nanocrystalline GeSn thin film on Si substrate by sputtering and rapid thermal annealing

Mahmodi, H Hashim, MR Hashim, U

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Publisher:: ACADEMIC PRESS LTD- ELSEVIER SCIENCE LTD
Publication Type:: Journal Article
Citation:: Superlattices and Microstructures, 2016, 98, pp. 235-241
Issue Date:: 2016-10-01

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Field	Value	Language
dc.contributor.author	Mahmodi, H
dc.contributor.author	Hashim, MR
dc.contributor.author	Hashim, U
dc.date.accessioned	2022-10-13T22:03:27Z
dc.date.available	2022-10-13T22:03:27Z
dc.date.issued	2016-10-01
dc.identifier.citation	Superlattices and Microstructures, 2016, 98, pp. 235-241
dc.identifier.issn	0749-6036
dc.identifier.issn	1096-3677
dc.identifier.uri	http://hdl.handle.net/10453/162566
dc.description.abstract	Nanocrystalline Ge1-xSnx thin films have been formed after rapid thermal annealing of sputtered GeSn layers. The alloy films were deposited onto the Silicon (100) substrate via low cost radio frequency magnetron sputtering. Then, the films were annealed by rapid thermal annealing at 350 °C, 400 °C, and 450 °C for 10 s. The morphological, structural, and optical properties of the layers were investigated with field emission scanning electron microscopy (FESEM), Energy-dispersive X-ray spectroscopy (EDX), Raman spectroscopy, and high-resolution X-ray diffraction (HR-XRD). The Raman analysis showed that the only observed phonon mode is attributed to Ge-Ge vibrations. Raman phonon intensities of GeSn thin films were enhanced with increasing the annealing temperature. The results clearly revealed that by increasing the annealing temperature the crystalline quality of the films were improved. The XRD measurements revealed the nanocrystalline phase formation in the annealed films with (111) preferred orientation. The results showed the potentiality of using the sputtering technique and rapid thermal anneal to produce crystalline GeSn layer.
dc.language	English
dc.publisher	ACADEMIC PRESS LTD- ELSEVIER SCIENCE LTD
dc.relation.ispartof	Superlattices and Microstructures
dc.relation.isbasedon	10.1016/j.spmi.2016.08.030
dc.rights	info:eu-repo/semantics/closedAccess
dc.subject	0204 Condensed Matter Physics, 0205 Optical Physics, 0206 Quantum Physics
dc.subject.classification	Applied Physics
dc.title	Formation of nanocrystalline GeSn thin film on Si substrate by sputtering and rapid thermal annealing
dc.type	Journal Article
utslib.citation.volume	98
utslib.for	0204 Condensed Matter Physics
utslib.for	0205 Optical Physics
utslib.for	0206 Quantum Physics
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Science
pubs.organisational-group	/University of Technology Sydney/Faculty of Science/School of Mathematical and Physical Sciences
utslib.copyright.status	closed_access	*
dc.date.updated	2022-10-13T22:03:25Z
pubs.publication-status	Published
pubs.volume	98

Abstract:

Nanocrystalline Ge1-xSnx thin films have been formed after rapid thermal annealing of sputtered GeSn layers. The alloy films were deposited onto the Silicon (100) substrate via low cost radio frequency magnetron sputtering. Then, the films were annealed by rapid thermal annealing at 350 °C, 400 °C, and 450 °C for 10 s. The morphological, structural, and optical properties of the layers were investigated with field emission scanning electron microscopy (FESEM), Energy-dispersive X-ray spectroscopy (EDX), Raman spectroscopy, and high-resolution X-ray diffraction (HR-XRD). The Raman analysis showed that the only observed phonon mode is attributed to Ge-Ge vibrations. Raman phonon intensities of GeSn thin films were enhanced with increasing the annealing temperature. The results clearly revealed that by increasing the annealing temperature the crystalline quality of the films were improved. The XRD measurements revealed the nanocrystalline phase formation in the annealed films with (111) preferred orientation. The results showed the potentiality of using the sputtering technique and rapid thermal anneal to produce crystalline GeSn layer.

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