Effects of post-deposition annealing on crystalline state of GeSn thin films sputtered on Si substrate and its application to MSM photodetector

Mahmodi, H; Hashim, MR

Effects of post-deposition annealing on crystalline state of GeSn thin films sputtered on Si substrate and its application to MSM photodetector

Mahmodi, H Hashim, MR

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Publisher:: IOP PUBLISHING LTD
Publication Type:: Journal Article
Citation:: Materials Research Express, 2016, 3, (10)
Issue Date:: 2016-10-01

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Field	Value	Language
dc.contributor.author	Mahmodi, H
dc.contributor.author	Hashim, MR
dc.date.accessioned	2022-10-24T21:58:59Z
dc.date.available	2022-10-24T21:58:59Z
dc.date.issued	2016-10-01
dc.identifier.citation	Materials Research Express, 2016, 3, (10)
dc.identifier.issn	2053-1591
dc.identifier.issn	2053-1591
dc.identifier.uri	http://hdl.handle.net/10453/162644
dc.description.abstract	Ge1.xSnx alloy thin films were prepared by co-sputtering from Ge and Sn targets on a Si (100) substrate at room temperature, and were then heated at temperature ranging from 200 °C to 500 °C in N2 ambient to reduce the disorder and defects and increase the crystalline quality of the films. Images obtained by field emission scanning electron microscopy revealed that the as-grown and all annealed samples displayed a densely packed morphology. The atomic percent composition of Sn in the asgrown Ge1-xSnx film is 5.7 at%. Energy-dispersive X-ray spectroscopy results showed Sn surface segregation after heat treatment, as the Sn composition is reduced to 3.3 at%for the film annealed at 500 °C. The Raman analysis showed that the only observed phonon mode is attributed to Ge-Ge vibrations. The Raman spectra of as-sputtered and annealed films revealed their nanocrystallineamorphous nature. The samples annealed at lower temperature exhibited higher phonon intensity, indicating the improvement of crystallinity of the film. The optoelectronic characteristics of fabricated metal-semiconductor-metal photodetectors on the annealed sample at 200 °C and the as-sputtered sample were studied in the dark and under illumination. Compared with the as-sputtered one, the annealed sample showed lower dark current and higher current gain of 209. The results showed the potentiality of using the sputtering technique to produce GeSn layer for optoelectronics application.
dc.language	English
dc.publisher	IOP PUBLISHING LTD
dc.relation.ispartof	Materials Research Express
dc.relation.isbasedon	10.1088/2053-1591/3/10/106403
dc.rights	info:eu-repo/semantics/closedAccess
dc.subject	0912 Materials Engineering
dc.title	Effects of post-deposition annealing on crystalline state of GeSn thin films sputtered on Si substrate and its application to MSM photodetector
dc.type	Journal Article
utslib.citation.volume	3
utslib.for	0912 Materials Engineering
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Science
pubs.organisational-group	/University of Technology Sydney/Faculty of Science/School of Mathematical and Physical Sciences
utslib.copyright.status	closed_access	*
dc.date.updated	2022-10-24T21:58:58Z
pubs.issue	10
pubs.publication-status	Published
pubs.volume	3
utslib.citation.issue	10

Abstract:

Ge1.xSnx alloy thin films were prepared by co-sputtering from Ge and Sn targets on a Si (100) substrate at room temperature, and were then heated at temperature ranging from 200 °C to 500 °C in N2 ambient to reduce the disorder and defects and increase the crystalline quality of the films. Images obtained by field emission scanning electron microscopy revealed that the as-grown and all annealed samples displayed a densely packed morphology. The atomic percent composition of Sn in the asgrown Ge1-xSnx film is 5.7 at%. Energy-dispersive X-ray spectroscopy results showed Sn surface segregation after heat treatment, as the Sn composition is reduced to 3.3 at%for the film annealed at 500 °C. The Raman analysis showed that the only observed phonon mode is attributed to Ge-Ge vibrations. The Raman spectra of as-sputtered and annealed films revealed their nanocrystallineamorphous nature. The samples annealed at lower temperature exhibited higher phonon intensity, indicating the improvement of crystallinity of the film. The optoelectronic characteristics of fabricated metal-semiconductor-metal photodetectors on the annealed sample at 200 °C and the as-sputtered sample were studied in the dark and under illumination. Compared with the as-sputtered one, the annealed sample showed lower dark current and higher current gain of 209. The results showed the potentiality of using the sputtering technique to produce GeSn layer for optoelectronics application.

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