Donor-Acceptor Pair Quantum Emitters in Hexagonal Boron Nitride.

Tan, Q; Lai, J-M; Liu, X-L; Guo, D; Xue, Y; Dou, X; Sun, B-Q; Deng, H-X; Tan, P-H; Aharonovich, I; Gao, W; Zhang, J

Donor-Acceptor Pair Quantum Emitters in Hexagonal Boron Nitride.

Tan, Q Lai, J-M Liu, X-L Guo, D Xue, Y Dou, X Sun, B-Q Deng, H-X Tan, P-H Aharonovich, I

Gao, W Zhang, J

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Publisher:: American Chemical Society
Publication Type:: Journal Article
Citation:: Nano Letters: a journal dedicated to nanoscience and nanotechnology, 2022, 22, (3), pp. 1331-1337
Issue Date:: 2022-02-09

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Field	Value	Language
dc.contributor.author	Tan, Q
dc.contributor.author	Lai, J-M
dc.contributor.author	Liu, X-L
dc.contributor.author	Guo, D
dc.contributor.author	Xue, Y
dc.contributor.author	Dou, X
dc.contributor.author	Sun, B-Q
dc.contributor.author	Deng, H-X
dc.contributor.author	Tan, P-H
dc.contributor.author	Aharonovich, I https://orcid.org/0000-0003-4304-3935
dc.contributor.author	Gao, W
dc.contributor.author	Zhang, J
dc.date.accessioned	2022-11-17T00:52:39Z
dc.date.available	2022-11-17T00:52:39Z
dc.date.issued	2022-02-09
dc.identifier.citation	Nano Letters: a journal dedicated to nanoscience and nanotechnology, 2022, 22, (3), pp. 1331-1337
dc.identifier.issn	1530-6984
dc.identifier.issn	1530-6992
dc.identifier.uri	http://hdl.handle.net/10453/163529
dc.description.abstract	Quantum emitters are needed for a myriad of applications ranging from quantum sensing to quantum computing. Hexagonal boron nitride (hBN) quantum emitters are one of the most promising solid-state platforms to date due to their high brightness and stability and the possibility of a spin-photon interface. However, the understanding of the physical origins of the single-photon emitters (SPEs) is still limited. Here we report dense SPEs in hBN across the entire visible spectrum and present evidence that most of these SPEs can be well explained by donor-acceptor pairs (DAPs). On the basis of the DAP transition generation mechanism, we calculated their wavelength fingerprint, matching well with the experimentally observed photoluminescence spectrum. Our work serves as a step forward for the physical understanding of SPEs in hBN and their applications in quantum technologies.
dc.format	Print-Electronic
dc.language	eng
dc.publisher	American Chemical Society
dc.relation	http://purl.org/au-research/grants/arc/CE200100010
dc.relation.ispartof	Nano Letters: a journal dedicated to nanoscience and nanotechnology
dc.relation.isbasedon	10.1021/acs.nanolett.1c04647
dc.rights	info:eu-repo/semantics/closedAccess
dc.subject.classification	Nanoscience & Nanotechnology
dc.title	Donor-Acceptor Pair Quantum Emitters in Hexagonal Boron Nitride.
dc.type	Journal Article
utslib.citation.volume	22
utslib.location.activity	United States
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Science
pubs.organisational-group	/University of Technology Sydney/Faculty of Science/School of Mathematical and Physical Sciences
utslib.copyright.status	closed_access	*
pubs.consider-herdc	false
dc.date.updated	2022-11-17T00:52:36Z
pubs.issue	3
pubs.publication-status	Published
pubs.volume	22
utslib.citation.issue	3

Abstract:

Quantum emitters are needed for a myriad of applications ranging from quantum sensing to quantum computing. Hexagonal boron nitride (hBN) quantum emitters are one of the most promising solid-state platforms to date due to their high brightness and stability and the possibility of a spin-photon interface. However, the understanding of the physical origins of the single-photon emitters (SPEs) is still limited. Here we report dense SPEs in hBN across the entire visible spectrum and present evidence that most of these SPEs can be well explained by donor-acceptor pairs (DAPs). On the basis of the DAP transition generation mechanism, we calculated their wavelength fingerprint, matching well with the experimentally observed photoluminescence spectrum. Our work serves as a step forward for the physical understanding of SPEs in hBN and their applications in quantum technologies.

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http://hdl.handle.net/10453/163529